한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제28권3호
  • /
  • Pages.154-159
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  • 2015
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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온도에 의한 산화물 박막트랜지스터의 문턱전압 이동 시뮬레이션 방안

Simulation Method of Temperature Dependent Threshold Voltage Shift in Metal Oxide Thin-film Transistors

  • 권세용 (서울과학기술대학교 전자공학과) ;
  • 정태호 (서울과학기술대학교 전자공학과)
  • Kwon, Seyong (Department of Electronics Engineering, Seoul National University of Science and Technology) ;
  • Jung, Taeho (Department of Electronics Engineering, Seoul National University of Science and Technology)
  • 투고 : 2014.10.22
  • 심사 : 2015.02.04
  • 발행 : 2015.03.01
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초록

In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

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참고문헌

  1. K. J. Yang and D. Y. Yoon, Korean Chem. Eng. Res., 48, 737 (2010).
  2. T. Jung, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 341 (2013).
  3. H. Ohta, K. Nomura, H. Hiramatsu, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Solid-State Electronics, 47, 2261 (2003). https://doi.org/10.1016/S0038-1101(03)00208-9
  4. H. L. Gomes, P. Stallinga, F. Dinelli, M. Murgia, F. Biscarini, D. M. D. Leeuw, M. Muccini, and K. Mllen, Polym. Adv. Technol., 16, 227 (2005). https://doi.org/10.1002/pat.558
  5. S. C. Deane, R. B. Wehrspohn, and M. J. Powell, Phys. Rev. B, 58, 19 (1998). https://doi.org/10.1103/PhysRevA.58.R19
  6. T. Jung, Proc. 6th Int. Conf. on Convergence and Hybrid Information Technology (eds. G. Lee, D. Howard, J. J. Kang, and D. Slezak) (ICHIT 2012, Daejeon, Korea, 2012) p. 453.
  7. S. C. Deane, R. B. Wehrspohn, and M. J. Powell, Phys. Rev. B, 58, 12625 (1998). https://doi.org/10.1103/PhysRevB.58.12625
  8. D. Gupta, S. H. Yoo, C. H. Lee, and Y. T. Hong, IEEE Trans. on Electron Devices, 58, 1995 (2011). https://doi.org/10.1109/TED.2011.2138143
  9. M. J. Powell, C. van Berkel, I. D. French, and D. H. Nicholls, Appl. Phys. Lett., 51, 1242 (1987). https://doi.org/10.1063/1.98692
  10. F. R. Libsch and J. Kanicki, Appl. Phys. Lett., 62, 1286 (1993). https://doi.org/10.1063/1.108709