Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Correlation between Capacitance and Structure-optical Properties of Semiconductor with Zero Leakage Current

누설전류 Zero인 반도체 물질의 구조적 광학적 특성과 전도성과의 상관성

  • Yun, Tae Hwan (Cheongju University, Division of Semiconductor Engineering) ;
  • Oh, Teresa (Cheongju University, Division of Semiconductor Engineering)
  • Received : 2015.08.26
  • Accepted : 2015.09.22
  • Published : 2015.09.30
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Abstract

It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.

Keywords

References

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