Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Numerical Study on CVI Process for SiC-Matrix Composite Formation

SiC 복합체 제조를 위한 화학기상침착공정에 대한 수치해석 연구

  • Bae, Sung Woo (Department of Mechanical Design Engineering, Graduate School, Chonbuk National University) ;
  • Im, Dongwon (DACC Carbon) ;
  • Im, Ik-Tae (Department of Mechanical Design Engineering, College of Engineering, Chonbuk National University)
  • 배성우 (전북대학교 대학원 기계설계공학과) ;
  • 임동원 ((주)데크카본) ;
  • 임익태 (전북대학교 공과대학 기계설계공학부)
  • Received : 2015.06.05
  • Accepted : 2015.06.22
  • Published : 2015.06.30
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Abstract

SiC composite materials are usually used to very high temperature condition such as thermal protection system materials at space vehicles, combustion chambers or engine nozzles because they have high specific strength and good thermal properties at high temperature. One of the most widely used fabrication methods of SiC composites is the chemical vapor infiltration (CVI) process. During the process, chemical gases including Si are introduced into porous preform which is made by carbon fibers for infiltration. Since the processes take a very long time, it is important to reduce the process time in designing the reactors and processes. In this study, both the gas flow and heat transfer in the reactors during the processes are analyzed using a computational fluid dynamics method in order to design reactors and processes for uniform, high quality SiC composites. Effects of flow rate and heater temperature as process parameters to the infiltration process were examined.

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References

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