참고문헌
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피인용 문헌
- A 1T-DRAM cell based on a tunnel field-effect transistor with highly-scalable pillar and surrounding gate structure vol.69, pp.3, 2016, https://doi.org/10.3938/jkps.69.323
- Analytical modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization-induced charges pp.08943370, 2018, https://doi.org/10.1002/jnm.2476