Journal of Integrative Natural Science (통합자연과학논문집)

The Basic Science Institute Chosun University (조선대학교 기초과학연구원)
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Investigation of Post Annealing Effect on the PZT Thin Films

  • Choi, Sujin (Department of Chemistry, Pukyong National University) ;
  • Park, Juyun (Department of Chemistry, Pukyong National University) ;
  • Koh, Sung-Wi (Department of Mechanical System Engineering, Pukyong National University) ;
  • Kang, Yong-Cheol (Department of Chemistry, Pukyong National University)
  • Received : 2015.11.08
  • Accepted : 2015.12.25
  • Published : 2015.12.30
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Abstract

The PZT thin films were deposited on Si(100) substrate using RF magnetron sputtering method. And the PZT thin films were post annealed at various temperatures to form perovskite phase. To analyze PZT thin films, surface profiler, XRD, XPS, CA, and SFE were used. The thickness increased from 536.5 to 833.2 nm as post annealing temperature increased. The perovskite PZT was observed from PZT-823 and pyrochlore PZT, $ZrO_2$, $TiO_2$, and perovskite $PbZrO_3$ were observed. From the XPS, the atomic percentages of Pb, Zr, Ti, and O were calculated and the portion of Pb increased to PZT-823 and decreased to PZT-923 and then increased to PZT-1023. Also, the CA and SFE was effected on post annealing temperature and as a function of atomic percentage of Pb, the CA and SFE was transformed.

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References

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