ETRI Journal

  • 제36권2호
  • /
  • Pages.321-324
  • /
  • 2014
  • /
  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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Robust Two-Phase Clock Oxide TFT Shift Register over Threshold Voltage Variation and Clock Coupling Noises

  • Nam, Hyoungsik (Department of Information Display and Advanced Display Research Center, Kyung Hee University) ;
  • Song, Eunji (Department of Information Display and Advanced Display Research Center, Kyung Hee University)
  • 투고 : 2013.05.14
  • 심사 : 2013.08.23
  • 발행 : 2014.04.01
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초록

This letter describes a two-phase clock oxide thin-film transistor shift register that executes a robust operation over a wide threshold voltage range and clock coupling noises. The proposed circuit employs an additional Q generation block to avoid the clock coupling noise effects. A SMART-SPICE simulation shows that the stable shift register operation is established for the clock coupling noises and the threshold voltage variation from -4 V to 5 V at a line time of $5{\mu}s$. The magnitude of coupling noises on the Q(15) node and Qb(15) node of the 15th stage is respectively -12.6 dB and -26.1 dB at 100 kHz in the proposed circuit, compared to 6.8 dB and 10.9 dB in a conventional one. In addition, the estimated power consumption is 1.74 mW for the proposed 16-stage shift registers at $V_{TH}=-1.56V$, compared to 11.5 mW for the conventional circuits.

키워드

참고문헌

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피인용 문헌

  1. High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing vol.37, pp.5, 2016, https://doi.org/10.1109/led.2016.2545692