Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Electrical and Optical Properties of Amorphous ITZO Deposited at Room Temperature by RF Magnetron Sputtering

RF 마그네트론 스퍼터링법으로 상온 증착된 비정질 ITZO 산화물의 전기적 및 광학적 특성

  • Lee, Ki Chang (School of Materials Science and Engineering, Kyungpook National University) ;
  • Jo, Kwang-Min (School of Materials Science and Engineering, Kyungpook National University) ;
  • Lee, Joon-Hyung (School of Materials Science and Engineering, Kyungpook National University) ;
  • Kim, Jeong-Joo (School of Materials Science and Engineering, Kyungpook National University) ;
  • Heo, Young-Woo (School of Materials Science and Engineering, Kyungpook National University)
  • 이기창 (경북대학교, 신소재공학부) ;
  • 조광민 (경북대학교, 신소재공학부) ;
  • 이준형 (경북대학교, 신소재공학부) ;
  • 김정주 (경북대학교, 신소재공학부) ;
  • 허영우 (경북대학교, 신소재공학부)
  • Received : 2014.10.10
  • Accepted : 2014.10.19
  • Published : 2014.10.31
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Abstract

The electrical and optical properties of amorphous In-Tin-Zinc-Oxide(ITZO) deposited at room temperature using rf-magnetron sputtering were investigated. The amorphous ITZO thin films were obtained at the composition of In:Sn:Zn = 6:2:2, 4:3:3, and 2:4:4, but the ITZO (8:1:1) showed a crystalline phase of bixbyite structure of In2O3. The resistivity of ITZO could be controlled by oxygen pressure in the sputtering ambient. The resistivity of post-annealed ITZO thin films exhibited the dependence on the amount of Indium. Optical energy band gap and transmittance increased as the amount of indium in ITZO increased. For the device application with ITZO, the bottom-gated thin-film transistor using ITZO as a active channel layer was fabricated. It showed a threshold voltage of 1.42V and an on/off ratio of $5.63{\times}10^7$ operated with saturation field-effect mobility of $14.2cm^2/V{\cdot}s$.

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