Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Third order Sigma-Delta Modulator with Delayed Feed-forward Path for Low-power Operation

저전력 동작을 위한 지연된 피드-포워드 경로를 갖는 3차 시그마-델타 변조기

  • Lee, Minwoong (Dept. Electronics Engineering, Chonbuk National University) ;
  • Lee, Jongyeol (Dept. Electronics Engineering, Chonbuk National University)
  • Received : 2014.05.09
  • Accepted : 2014.09.30
  • Published : 2014.10.25
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Abstract

This paper proposes an architecture of $3^{rd}$ order SDM(Sigma-Delta Modulator) with delayed feed-forward path in order to reduce the power consumption and area. The proposed SDM improve the architecture of conventional $3^{rd}$ order SDM which consists of two integrators. The proposed architecture can increase the coefficient values of first stage doubly by inserting the delayed feed-forward path. Accordingly, compared with the conventional architecture, the capacitor value($C_I$) of first integrator is reduced by half. Thus, because the load capacitance of first integrator became the half of original value, the output current of first op-amp is reduced as 51% and the capacitance area of first integrator is reduced as 48%. Therefore, the proposed method can optimize the power and the area. The proposed architecture in this paper is simulated under conditions which are supply voltage of 1.8V, input signal 1Vpp/1KHz, signal bandwidth of 24KHz and sampling frequency of 2.8224MHz in the 0.18um CMOS process. The simulation results are SNR(Signal to Noise Ratio) of 88.9dB and ENOB(Effective Number of Bits) of 14-bits. The total power consumption of the proposed SDM is $180{\mu}W$.

본 논문은 전력소모와 면적을 줄인 지연된 피드-포워드 경로를 갖는 3차 SDM 구조를 제안하였다. 제안한 SDM은 기존의 적분기 2개로 구현된 3차 SDM(Sigma-Delta Modulator) 구조를 개선하였다. 제안된 구조에서는 기존 구조의 둘째 단에 지연된 피드-포워드 경로를 삽입함으로써 첫째 단의 계수 값을 2배로 증가시킬 수 있어 기존구조에 비하여 첫째 단 적분기 커패시터($C_I$)를 1/2로 감소시킬 수 있다. 그러므로 첫째 단 적분기의 부하 커패시턴스가 1/2로 작아지기 때문에 첫째 단 연산증폭기의 출력전류는 51%, 첫째 단의 커패시터 면적은 48% 감소되어 제안한 구조는 전력과 면적을 최적화 할 수 있다. 본 논문에서 제안한 구조를 이용하여 설계된 3차 SC SDM은 $0.18{\mu}m$ CMOS 공정에서 공급전압 1.8V, 입력신호 1Vpp/1KHz, 신호대역폭 24KHz, 샘플링 주파수 2.8224MHz 조건으로 시뮬레이션 하였다. 그 결과 SNR(Signal to Noise Ratio) 88.9dB, ENOB(Effective Number of Bits) 14비트이고 SDM의 전체 전력소모는 $180{\mu}W$이다.

Keywords

References

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