References
- A. Agarwal, P. J. Stout, S. Banna, S. Rauf, K. Tokashiki, J. Y. Lee, and K. Collins, J. Appl. Phys. 106, 103305 (2009). https://doi.org/10.1063/1.3262616
- A. Agarwal, S. Rauf, and K. Collins, J. Appl. Phys. 112, 033303 (2012). https://doi.org/10.1063/1.4745877
- S. Banna, A. Agarwal, G. Cunge, M. Darnon, E. Pargon, and O. Joubert, J. Vac. Sci. Technol. A 30, 040801 (2012).
- A. Agarwal, P. J. Stout, S. Banna, S. Rauf, and K. Collins, Appl. Phys. Lett. 100, 044105 (2012). https://doi.org/10.1063/1.3679075
- T. H. Ahn, K. Nakamura, and H. Sugai, Plasma Sources Sci. Technol. 5, 139 (1996). https://doi.org/10.1088/0963-0252/5/2/005
- B. Ramamurthi and D. J. Economou, J. Vac. Sci. Technol. A 20, 467 (2001).
- S. A. Voronin, M. R. Alexander, and J. W. Bradley, Meas. Sci. Technol. 15, 2375 (2004). https://doi.org/10.1088/0957-0233/15/12/004
- A. Agarwal, S. Rauf, and K. Collins, Appl. Phys. Lett. 99, 021501 (2011). https://doi.org/10.1063/1.3610466
- P. Subramonium and M. J. Kushner, Appl. Phys. Lett. 79, 2145 (2001). https://doi.org/10.1063/1.1406139
- P. Subramonium and M. J. Kushner, J. Appl. Phys. 96, 82 (2004). https://doi.org/10.1063/1.1751636
- P. Subramonium and M. J. Kushner, J. Vac. Sci. Technol. A 22, 534 (2004). https://doi.org/10.1116/1.1690251
- M. Schaepkens, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. B 18, 856 (2000). https://doi.org/10.1116/1.591286
- S. Banna, A. Agarwal, K. Tokashiki, H. Cho, S. Rauf, V. Todorow, K. Ramaswamy, K. Collins, P. Stout, J. Y. Lee, J. Yoon, K. Shin, S. J. Choi, H. S. Cho, H. J. Kim, C. Lee, and D. Lymberopoulos, IEEE Trans. Plasma Sci. 37, 1730 (2009). https://doi.org/10.1109/TPS.2009.2028071
- K. Tokashiki, H. Cho, S. Banna, J. Y. Lee, K. Shin, V. Todorow, W. S. Kim, K. H. Bai, S. H. Joo, J. D. Choe, K. Ramaswamy, A. Agarwal, S. Rauf, K. Collins, S. J. Choi, H. Cho, H. J. Kim, C. Lee, D. Dymberopoulos, J. Yoon, W. Han, and J. T. Moon, Jpn. J. Appl. Phys. 48, 08DH01 (2009).
- S. H. Song and M. J. Kushner, J. Vac. Sci. Technol. A 32, 021306 (2014). https://doi.org/10.1116/1.4863948
- S. A. Voronin, M. R. Alexander, and J. W. Bradley, Meas. Sci. Technol. 16, 2446 (2005). https://doi.org/10.1088/0957-0233/16/12/007
- M. Brihoum, G. Cunge, M. Darnon, D. Gahan, O. Joubert, and N. St. J. Braithwaite, J. Vac. Sci. Technol. A 31, 020604 (2013).
- H. Shin, W. Zhu, L. Xu, V. M. Donnelly, and D. J. Economou, Plasma Sources Sci. Technol. 20, 055001 (2011). https://doi.org/10.1088/0963-0252/20/5/055001
- Z. L. Dai and Y. N. Wang, J. Appl. Phys. 92, 6428 (2002). https://doi.org/10.1063/1.1517732
- E. V. Barnat and T. M. Lu, Phys. Rev. E 66, 056401 (2002). https://doi.org/10.1103/PhysRevE.66.056401
- P. Diomede, D. J. Economou, and V. M. Donnelly, J. Appl. Phys. 111, 123306 (2012). https://doi.org/10.1063/1.4728997
- H. Zhang, Z. L. Dai, and Y. N. Wang, Plasma Sci. Technol. 13, 513 (2011). https://doi.org/10.1088/1009-0630/13/5/01
- P. A. Miller and M. E. Riley, J. Appl. Phys. 82, 3689 (1997). https://doi.org/10.1063/1.365732
- T. Panagopoulos and D. J. Economou, J. Appl. Phys. 85, 3435 (1999). https://doi.org/10.1063/1.369701
- A. Metze, D. W. Ernie, and H. J. Oskam, J. Appl. Phys. 60, 3081 (1986). https://doi.org/10.1063/1.337764
- D. C. Kwon, W. S. Chang, M. Park, D. H. You, M. Y. Song, S. J. You, Y. H. Im, and J.-S. Yoon, J. Appl. Phys. 109, 073311 (2011). https://doi.org/10.1063/1.3572264
- M. A. Lieberman and A. J. Lichtenberg, Principle of Plasma Discharges and Materials Processing, 2nd ed. (Wiley, New York, 2004).