Bulletin of the Korean Chemical Society

  • 제35권11호
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  • Pages.3299-3302
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  • 2014
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  • 0253-2964(pISSN)
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  • 1229-5949(eISSN)
대한화학회 (Korean Chemical Society)
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Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

  • Dao, Tung Duy (Department of Chemistry, Chonnam National University) ;
  • Jeong, Hyun-Dam (Department of Chemistry, Chonnam National University)
  • 투고 : 2014.04.18
  • 심사 : 2014.07.30
  • 발행 : 2014.11.20
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초록

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

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