References
- S. C. Cripps, RF Power Amplifier for Wireless Communications, Artech House, 2002.
- 3GPP technical specification, TS 36.104 V8.7.0. [Online]. Available:http://www.3gpp.org/ftp/Specs/latest/Rel-8/36_series/
- D. Chowdhury, C. Hull, O. Degani, P. Goyal, Y. Wang, and A. Niknejad, "A single-chip highly linear 2.4 GHz 30 dBm power amplifier in 90 nm CMOS", in Proc. IEEE Int. Solid-State Circuits Conf., pp. 378-379, Feb. 2009.
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- J. Fritzin, C. Svensson, and A. Alvandpour, "A +32 dBm 1.85 GHz class-D outphasing RF PA in 130 nm CMOS for WCDMA/LTE", in Proc. ESSCIRC, pp. 127-130, Sep. 2011.
- Brecht Francois, Patrick Reynaert, "A fully integrated wattlevel linear 900-MHz CMOS RF power amplifier for LTE-applications", IEEE Trans. Microw. Theory Tech., vol. 60, no. 6, pp. 1878-1885, Mar. 2012. https://doi.org/10.1109/TMTT.2012.2189411
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- A. Afsahi, A. Behzad, and L. Larson, "A 65 nm CMOS 2.4 GHz 31.5 dBm power amplifier with a distributed LC power-combining network and improved linearization forWLAN applications", in Proc. IEEE Int. Solid-State Circuits Conf., pp. 452-453, Feb. 2010.
- A. Afsahi, L. Larson, "An integrated 33.5 dBm linear 2.4 GHz power amplifier in 65 nm CMOS for WLAN applications", in Proc. IEEE Custom Integr. Circuits Conf. (CICC), pp. 1-4, Sep. 2010.
- B. Francois, P. Reynaert, "A fully integrated watt-level linear 900 MHz CMOS RF power amplifier for LTEapplications", IEEE Trans. Microw. Theory Tech., vol. 60, no. 6, pp. 1878-1885, Apr. 2012. https://doi.org/10.1109/TMTT.2012.2189411
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