References
- M. T. Rahimo, and N. Y, A Shammas, "Reverse recovery failure modes in modern fast recovery diodes," International Conference on Microelectronic, Vol.2, pp.659-662, May, 2000.
- M. Diatta et al, "Understanding the failure mechanisms of protection diodes during system level ESD: toward repetitive stress robustness", IEEE Trans. Electron Devices. Vol.59, pp.108-113, January, 2012 https://doi.org/10.1109/TED.2011.2173576
- R. Wu, F. Blaabjerg, H. Wang, and M. Liserre, "Overview of catastrophic failures of freewheeling diodes in power electronic circuits" Microelectron. Reliab., Vol.53, pp.1788-1792, August, 2013. https://doi.org/10.1016/j.microrel.2013.07.126
- M. T. Rahimo, and N. Y. A. Shammas, "Freewheeling diode reverse-recovery failure modes in IGBT applications," IEEE Trans. Ind. Appl., Vol.37, pp.661-670, Mar, 2001. https://doi.org/10.1109/28.913734
- A. Amerasekera , Ch. Duvvury, W. Anderson, H. Gieser, and S. Ramaswamy, ESD in Silicon Integrated Circuits, Second Edition, John Wiley & Sons, Ltd., England, 2002.
- J. Cambieri et al, "ESD induced leakage current increase of diffusion diodes," Proceeding of the 34th EOS/ESD Symposium, pp.1-6, September, 2012.
- F. Ch. Hou, G. Bosman, E. Simoen, J. Vanhellemont, and C. Claeys , IEEE Trans. Electron Devices. 45 (1998) 2528 - 2536. https://doi.org/10.1109/16.735731
- D. Bouangeune, et al, "ESD robustness of lowvoltage/ high-speed TVS devices with epitaxial grown films," Proc. Of The 1st IEEE GCCE, pp.189-192, Oct., 2012.
- S. S. Choi, D. H. Cho and K. H. Shim, "Development of Transient Voltage Suppressor Device with Abrupt Junctions Embedded by Epitaxial Growth Technology," Electron. Mater. Lett. Vol.5, NO.2, pp. 59-62, June, 2009. https://doi.org/10.3365/eml.2009.06.059
- D. Bouangeune et al, "Effect of electrostatic discharge on electrical properties of bidirectional TVS Zener diode with abrupt junction," Materials Transactions. Vol.54, pp.2125-2130, October, 2013. https://doi.org/10.2320/matertrans.M2013144
- M. Miller, "Differences between Platinum- and gold-doped silicon power devices," IEEE Trans. Electron Devices ED. Vol.23, pp.1279-1283, December, 1976. https://doi.org/10.1109/T-ED.1976.18650
- D. E. Houston, M. S. Adler, and E. D. Wolley, "measurement and analysis of charge distribution and their decay in fast switching power rectifiers," International Electron Devices Meeting. Vol.23, pp.308-312, 1977.
- MSR1560-D, http://www.onsemi.com/pub/Collateral/MSR1560-D.PDF.
- 15eth06, http://www.irf.com/product-
- info/datasheets/data/15eth06.pdf.
- Ch. Wang, L. Yin, and Ch. Wang, "A Physics-Based Model for Fast Recovery Diodes with Lifetime Control and Emitter Efficiency Reduction," International Journal of Electronics and Electrical Engineering, Vol.6, pp.7-11 January, 2012.
- S.M. Sze, and Kwok k. NG, Physic of semiconductor device, 3th Edition, John Wiley & Sons Inc., Canada, pp. 281-304, 2007.
- A. Jahanzeb et al, " TLP characterization for testing system level ESD performance," EOS/ESD Symposium, pp.1-8, October, 2010.
- G. Chen et al, "Sn enhanced TLP system for ESD characterization in semiconductor technologies," The 3rd ICCRD, pp.402-406, March, 2011.
- S.C. Huang et al, "Circuit and silicide impact on the correlation between TLP and ESD (HBM and MM)," IEEE International Integrated Reliability Workshop Final Report, pp.169-172, October, 2004.
- S H. Voldman et al, "Standardization of the transmission line pulse (TLP) methodology for electrostatic discharge (ESD)," EOS/ESD Symposium, pp.1-10, September, 2003.