전력전자학회논문지 (The Transactions of the Korean Institute of Power Electronics)

  • 제19권3호
  • /
  • Pages.283-289
  • /
  • 2014
  • /
  • 1229-2214(pISSN)
  • /
  • 2288-6281(eISSN)
전력전자학회 (The Korean Institute of Power Electronics)
권호 표지
DOI QR코드

DOI QR Code

Si MOSFET과 GaN FET Power System 성능 비교 평가

Comparative Performance Evaluation of Si MOSFET and GaN FET Power System

  • Ahn, Jung-Hoon (Dept. of Electrical Eng., Sungkyunkwan University) ;
  • Lee, Byoung-Kuk (Dept. of Electrical Eng., Sungkyunkwan University) ;
  • Kim, Jong-Soo (Div. of Electric, Electronic and Communication Eng., Daejin University)
  • 투고 : 2013.12.30
  • 심사 : 2014.03.18
  • 발행 : 2014.06.20
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

This paper carries out a series of analysis of power system using Gallium Nitride (GaN) FET which has wide band gap (WBG) characteristics comparing to conventional Si MOSFET-used power system. At first, for comparison of each semiconductor device, the switching-transient parameter is quantitatively extracted from released information of GaN FET. And GaN FET model which reflect this dynamic property is configured. By using this model, the performance of GaN FET is analyzed comparing to Si MOSFET. Also, in order to enable a representative assessment on the power system level, Si MOSFET and GaN FET are applied to the most common structure of power system, full-bridge, and each power systems are compared based on various criteria, such as performance, efficiency and power density. The entire process is verified with the aid of mathematical analysis and simulation.

키워드

참고문헌

  1. Kaminski. N, "State of the Art and Future of Wide Band-Gap Devices," in Proc, EPE '09 13th European Conference on, Barcelona, 2009.
  2. S. J. Pearton et al. "GaN Electronics for High Power, High Temperature Applications," Electrochem. Soc. Interface, Vol. 9, No. 2, pp. 34-39, 2000.
  3. M.J. Rosker et al., "NEXT Program," Dec 3th, 2008.
  4. M. Rosker et al., "The DARPA Wide Band Gap Semiconductors for RF Applications (WBGS-RF) Program," CS MANTECH Conf., Tampa, Florida, USA, May 18th-21st, 2009.
  5. DGA, "European Scenario for GaN and SiC for Microwave Applications," Apr. 27th, 2010.
  6. S. Delage, "MORGAN-Materials for Robust Gallium Nitride," June 2009.
  7. S.L. Delage, "UltraGaN Project: Breakthrough in GaN Devices Thanks to InAlN/GaN Heterostructure," 2nd EU FET-Clustee Meeting, Nov. 13th-16th, 2007.
  8. Strategy Analytics, "GaN Power Market to Rise to $10 Million in 2012, Says Yole," Mar. 7th, 2012.
  9. Alex Lidow, Johan Strydom, "Gallium Nitride (GaN) Technology Overview," white paper of EPC(WP001), Dec. 27th, 2012.
  10. Powersim, "PSIM User's Guide," pp. 35-53, May 2010.
  11. W. Y. Sung, D. G. Woo, Y. S. Kim, and B. K. Lee, "Advanced Simulation Model for Loss Analysis of Converters in Electric Vehicles," IEEE Vehicular Power and Propulsion Conference (VPPC2012), Seoul, Korea, pp. 1206-1210, Oct. 9-12, 2012,
  12. Muhlethaler, J., Kolar, J.W., Ecklebe, A., "Loss modeling of inductive components employed in power electronic systems," Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on, pp. 945-952, May 30-June 3 2011.
  13. G. B. Koo, G. W. Moon, and M. J. Youn, "Analysis and Design of Phase Shift Full Bridge Converter With Series-Connected Two Transformers," IEEE Transactions on Power Electronics, Vol 19, No. 2, pp. 411-419, Mar. 2004. https://doi.org/10.1109/TPEL.2003.823193
  14. Y. K. Lo, C. Y Lin, M. T. Hsieh, and C. Y. Lin, "Analysis and Design of Phase Shift Full Bridge Converter With Series-Connected Two Transformers," IEEE Transactions on Industrial Electronics, Vol 58, No. 6, pp. 2572-2575, Jun. 2011. https://doi.org/10.1109/TIE.2010.2058076
  15. Y. C. Hsieh, and C. S. Huang, "Li-ion battery charger based on digitally controlled phase-shifted full-bridge converter," IET Transactions on Power Electronics, Vol 4, No. 2, pp. 242-247, Jul. 2009.