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Activation Energy of 69Ga, 71Ga, and 75As Nuclei in GaAs:Mn2+ Single Crystal

  • Yeom, Tae Ho (Department of Laser and Optical Information Engineering, Cheongju University) ;
  • Lim, Ae Ran (Department of Science Education, Jeonju University)
  • 투고 : 2014.02.08
  • 심사 : 2014.04.20
  • 발행 : 2014.06.30

초록

The spin-lattice relaxation time, $T_1$, for $^{69}Ga$, $^{71}Ga$, and $^{75}As$ nuclei in GaAs:$Mn^{2+}$ single crystals was measured as a function of temperature. The values of $T_1$ for $^{69}Ga$, $^{71}Ga$, and $^{75}As$ nuclei were found to decrease with increasing temperature. The $T_1$ values in GaAs:$Mn^{2+}$ crystal are similar to those in pure GaAs crystal. The calculated activation energies for the $^{69}Ga$, $^{71}Ga$, and $^{75}As$ nuclei are 4.34, 4.07, and 3.99 kJ/mol. It turns out that the paramagnetic impurity effect of $Mn^{2+}$ ion doped in GaAs single crystal was not strong on the spin-lattice relaxation time.

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