참고문헌
-
G. Dingemans, W. Beyer, M. C. M. v. d Sanden, and W. M. M. kessels, "Hydrogen Induced Passivation of Si Interface by Al2O3 Films and
$SiO_2/Al_2O_3$ Stacks," Appl. Phys. Lett., 97 [15] 152106 (2010). https://doi.org/10.1063/1.3497014 -
J. Kim, D.-R. Kwon, K.-Y. Oh, and C. Lee, "Improvement in
$Al_2O_3$ Dielectric Behavior by Using Ozone as an Oxidant for Theatomic Layer Deposition Technique," J. Kor. Vac. Soc., 11 [3] 183-88 (2002) -
B. Kafle, S. Kuenhold, W. Beyer, S. Lindekugel, P. Saint-Cast, M. Hofmann, and J. Rentsch, "Thermal Stability Investigations of PECVD
$Al_2O_3$ Fiim Discussing a Possibilty of Improving Surface Passivation by Re-hydrogenation after High Themperature Processes," pp. 1788-92, 27th EU-PVESEC 2012 Frankfurt, Germany. -
Y.-T. Kim, S.-M. Cho, Y.-G. Seo, Y.-M. Im, and D.-H. Yoon, "The Effect of RF Power and
$SiH_4/(N_2O+N_2)$ Ratio in Properties of SiON Thick Film for Silica Optical Waveguide(in Korean)," J. Kor. Ceram. Soc., 38 [12] 1150-54 (2001). -
T. Ludera, T. Lauermann, A. Zuschlag, G. Hahn, and B. Terheiden, "
$Al_2O_3$ /SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing," Energy Procedia, 27 426-31 (2012). https://doi.org/10.1016/j.egypro.2012.07.088 - M. I. Alayoa, I. Pereyraa, W. L. Scopelb, and M. C. A. Fantinib, "On the Nitrogen and Oxygen Incorporation in Plasma-enhanced Chemicalvapor Deposition (PECVD) SiOxNy Films," Thin Solid Films, 402 [1-2] 154-61 (2002). https://doi.org/10.1016/S0040-6090(01)01685-6
- J. Dupuis, E. Fourmond, J. F. Lelievre, D. Ballutaud, and M. Lemiti, "Impact of PECVD SiON Stoichiometry and Post-annealing on the Silicon Surface Passivation," Thin Solid Films, 516 [20] 6954-58 (2008). https://doi.org/10.1016/j.tsf.2007.12.026
-
B. Vermang, H. Goverde, A. Uruena, A. Lorenz, E. Cornagliotti,, A. Rothschild, J. John, J. Poortmans, and R. Mertens, "Blistering in ALD
$Al_2O_3$ Passivation Layers as Rear Contacting for Local Al BSF Si Solar Cells," Sol. Energy Mater. Sol. Cells, 101 204-09 (2012). https://doi.org/10.1016/j.solmat.2012.01.032 - P. F. Becher, "Recent Advances in Microstructural Tailoring of Silicon Nitride Ceramics and the Effects on Thermal Conductivity and Fracture Properties," J. Kor. Ceram. Soc., 42 [8] 525-31 (2005). https://doi.org/10.4191/KCERS.2005.42.8.525
-
V. Naumanna, M. Ottob, R. B. Wehrspohnb, M. Wernera, and C. Hagendorfa, "Interface and Material Characterization of Thin ALD-
$Al_2O_3$ Layers on Crystalline Silicon," Silicon PV: April 03-05, 2012, Leuven, Belgium. -
S. Kuhnhold, B. Kafle, L. Kroely, P. Saint-Cast, M. Hofmann, J. Rentsch, and R. Preu, "Impact of Thermal Treatment on PECVD
$Al_2O_3$ Passivation Layers," Energy Procedia, 27 273-79 (2012). https://doi.org/10.1016/j.egypro.2012.07.063 -
S. Jakschik, U. Schroeder, T. Hecht, M. Gutsche, H. Seidl, and J. Bartha, "Crystallization Behavior of Thin ALD-
$Al_2O_3$ Films," Thin Solid Films, 425 [1-2] 216-20 (2003). https://doi.org/10.1016/S0040-6090(02)01262-2 -
G. Dingemans, P. Engelhart, R. Seguin, F. Einsele, B. Hoex, M. C. M. Van de Sanden, and W. M. M. Kessels, "Stability of
$Al_2O_3$ and$Al_2O_3$ .a-SiNx:H Stacks for Surface Passivation of Crystalline Silicon," J. Appl. Phys., 106 114907 (2009). https://doi.org/10.1063/1.3264572
피인용 문헌
- N형 양면 수광 태양전지를 위한 레이저 공정의 후면 패시베이션 적층 구조 영향성 vol.30, pp.5, 2014, https://doi.org/10.3740/mrsk.2020.30.5.262