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On Formation of Residual Carbon Layer in CuInSe2 Thin Films Formed via direct Solution Coating Process

직접 용액 코팅법에 의해 제조한 CuInSe2 에 잔존하는 탄소 불순물층 형성에 관한 연구

  • Ahn, SeJin (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Rehan, Shanza (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Eo, Young-Joo (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Gwak, Jihye (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Yoon, Kyunghoon (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Cho, Ara (Photovoltaic Laboratory, Korea Institute of Energy Research)
  • 안세진 (태양광연구실, 한국에너지기술연구원) ;
  • ;
  • 어영주 (태양광연구실, 한국에너지기술연구원) ;
  • 곽지혜 (태양광연구실, 한국에너지기술연구원) ;
  • 윤경훈 (태양광연구실, 한국에너지기술연구원) ;
  • 조아라 (태양광연구실, 한국에너지기술연구원)
  • Received : 2014.02.28
  • Accepted : 2014.03.11
  • Published : 2014.03.31

Abstract

Formation mechanism of residual carbon layer, frequently observed in the $CuInSe_2$ (CIS) thin film prepared by direct solution coating routes, was investigated in order to find a way to eliminate it. As a model system, a methanol solution with dissolved Cu and In salts, whose viscosity was adjusted by adding ethylcellulose (EC), was chosen. It was found that a double layer, a top metal ion-derived film and bottom EC-derived layer, formed during an air drying step presumably due to different solubility between metal salts and EC in methanol. Consequently, the top metal ion-derived film acts as a barrier layer inhibiting further thermal decomposition of underlying EC, resulting a formation of bottom carbon residue layer.

Keywords