DOI QR코드

DOI QR Code

Studies on Effect of S/Se Ratio on the Properties of Cu2ZnSn(SxSe1-x)4 (CZTSSe) Thin Films by Sulfo-Selenization of Stacked Precursor Thin Films

열처리 시 S/Se 분말 비율에 따른 Cu2ZnSnSe4 (CZTSSe) 박막의 합성 및 특성 평가

  • Gang, Myeng Gil (Optoelectronic(s) Convergence Research Center and Dept. of Mater. Sci. & Eng.,Chonnam Nat. Univ.) ;
  • He, Ming Rui (Optoelectronic(s) Convergence Research Center and Dept. of Mater. Sci. & Eng.,Chonnam Nat. Univ.) ;
  • Hong, Chang Woo (Optoelectronic(s) Convergence Research Center and Dept. of Mater. Sci. & Eng.,Chonnam Nat. Univ.) ;
  • Kim, Jin Hyeok (Optoelectronic(s) Convergence Research Center and Dept. of Mater. Sci. & Eng.,Chonnam Nat. Univ.)
  • 강명길 (광.전자재료실험실, 신소재공학부, 전남대학교) ;
  • ;
  • 홍창우 (광.전자재료실험실, 신소재공학부, 전남대학교) ;
  • 김진혁 (광.전자재료실험실, 신소재공학부, 전남대학교)
  • Received : 2014.11.19
  • Accepted : 2014.11.29
  • Published : 2014.12.31

Abstract

$Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at $540^{\circ}C$ in Ar atmosphere with pre-treatment at $300^{\circ}C$. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% ($V_{oc}$ : 348 mV, $J_{sc}$ : $26.71mA/cm^2$, FF : 50%, and active area : $0.31cm^2$). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.

Keywords