센서학회지 (Journal of Sensor Science and Technology)

  • 제23권2호
  • /
  • Pages.114-121
  • /
  • 2014
  • /
  • 1225-5475(pISSN)
  • /
  • 2093-7563(eISSN)
한국센서학회 (The Korean Sensors Society)
권호 표지
DOI QR코드

DOI QR Code

스트레스 감도 향상을 위한 턴 온 직후의 조름 효과를 이용한 얇은 질화막 폴리실리콘 전계 효과 트랜지스터 압력센서

A Polysilicon Field Effect Transistor Pressure Sensor of Thin Nitride Membrane Choking Effect of Right After Turn-on for Stress Sensitivity Improvement

  • 정한영 (서울대학교 융합과학기술대학원 나노융합학과) ;
  • 이정훈 (서울대학교 융합과학기술대학원 나노융합학과)
  • Jung, Hanyung (Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University) ;
  • Lee, Junghoon (Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University)
  • 투고 : 2013.12.23
  • 심사 : 2014.02.25
  • 발행 : 2014.03.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.

키워드

참고문헌

  1. T. P. Burg, M. Godin, S.M. Knudsen, W. Shen, G. Carlson, J. S. Foster, K. Babcock, and S. R. manalis, "Weighing of biomolecules, single cells and single nanoparticles in fluid", Nature, vol. 446, no. 7139, pp. 1066-1069, 2007. https://doi.org/10.1038/nature05741
  2. M. S. Cha, J. H. Shin, J. H. Kim, I. C. Kim, J. B. Choi, N. H. Lee, B. G. Kim, and J. H. Lee, "Biomolecular detection with a thin membrane transducer", Lab Chip, vol. 8, no. 6, pp. 932-937, 2008. https://doi.org/10.1039/b719101d
  3. S. Pramanik, B. Pingguan-Murphy, and N. A. Abu Osman, "Developments of immobilized surface modified piezoelectric crystal biosensors for advanced applications", Int. J. of Electrochemical Science, vol. 8, no. 6, pp. 8863-8892, 2013.
  4. F. Huber, H. P. Lang, N. Backmann, D. Rimoldi, and Ch. Gerber, "Direct detection of a BRAF mutation in total RNA from melanoma cells using cantilever arrays", Nature Nanot., vol. 8, no. 2, pp. 125-129, 2013. https://doi.org/10.1038/nnano.2012.263
  5. K. S. Hwang, J. H. Lee, J. B. Park, D. S. Yoon, J. H. Park, and T. S. Kim, "In-situ quantitative analysis of a prostatespecific antigen (PSA) using a nanomechanical PZT cantilever", Lab Chip, vol. 4, no. 6, pp. 547-552, 2004. https://doi.org/10.1039/b410905h
  6. S. Hur and Y. D. Jung, "pH measurements with a microcantilever array-based biosensor system", J. Sensor Sci. & Tech., vol. 21, no. 3, pp. 186-191, 2012. https://doi.org/10.5369/JSST.2012.21.3.186
  7. R. C. Jaeger, J. C. Suhling, R. Ramani, A. T. Bradley, and J. Xu, "CMOS stress sensors on (100) silicon", IEEE J. of Solid-State Citcuits, vol. 35, pp. 85-95, 2000. https://doi.org/10.1109/4.818923
  8. K. S. Kim, J. I. Ju, and K. B. Song, "Easy detection of amyloid $\beta$-protein using photo-sensitive field effect", J. Sensor Sci. & Tech., vol. 21, no. 5, pp. 339-344, 2012. https://doi.org/10.5369/JSST.2012.21.5.339
  9. J. O. Lim, J. B. Yu, J. Y. Kwon, H. G. Byun, J. S. Huh, and W. J. Cho, "Development of sugar sensitive drosophila cell based ISFET sensor for Alzheimer's disease diagnosis", J. Sensor Sci. & Tech., vol. 22, no. 4, pp. 281-285, 2013. https://doi.org/10.5369/JSST.2013.22.4.281
  10. A. D. Koehler, A. Gupta, S. Parthasarathy, K. J. Linthicum, J. W. Johnson, T. Nishida, and S. E. Thompson, "Extraction of AlGaN GaN HEMT gauge factor in the presence of traps", IEEE Elect. Dev. Lett., vol. 31, pp. 665-667, 2010. https://doi.org/10.1109/LED.2010.2048195
  11. M. Chu, A. D. Koehler, A. Gupta, T. Nishida, S. E. Thompson, "Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility", J. of Appl. Phys., vol. 108, no. 10, p. 104502, 2010. https://doi.org/10.1063/1.3500465
  12. M. D. Jacunski, M. S. Shur, and M. Hack, "Threshold voltage, field effect mobility, and gate to channel capacitance in polysilicon TFT's", IEEE Trans. Electr. Dev., vol. 40, pp. 1433-1440, 1996.
  13. M. Kimura, I. Yudasaka, S. Kanbe, H. Kobayashi, H. Kiguchi, S. Seki, S. Miyashita, T. Shimoda, T. Ozawa, K. Kitawada, T. Nakazawa, W. Miyazawa, and H. Ohshima, "Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display", IEEE Trans. Electr. Dev., vol. 46, no. 12, pp. 2282-2288, 1999. https://doi.org/10.1109/16.808054
  14. N. Ueda, E. Nishiyama, H. Aota, and H. Watanabe, "Pre- diction of stress induced characteristic changes for small scale analog IC", IEEE Conference on Microelectronic Test Structures, pp. 107-110, 2008.
  15. A. T. Bradley, R. C. Jaeger, J. C. Suhling, and K. J. O'Connor, "Piezoresistive characteristics of short-channel MOSFETs on (100) silicon", IEEE Trans. Electr. Dev., vol. 40, pp. 2009-2014, 2001.
  16. R. Raiteria, M. Grattarolaa, H. Jr. Buttb, and P. Skladal, "Micromechanical cantilever-based biosensors", Sens. Actuator B-Chem., vol. 4010, pp. 1-12, 2001.