(F, Ga) 코도핑된 ZnO 투명 전도 박막의 솔-젤 제조와 특성

Sol-gel Spin-coating of ZnO Co-doped with (F, Ga) as A Transparent Conducting Thin Film

  • 남길모 (서울시립대학교 신소재공학과) ;
  • 권명석 (서울시립대학교 신소재공학과)
  • Nam, Gil Mo (Department of Materials Science and Engineering, University of Seoul) ;
  • Kwon, Myoung Seok (Department of Materials Science and Engineering, University of Seoul)
  • 투고 : 2014.03.03
  • 심사 : 2014.03.20
  • 발행 : 2014.03.31

초록

(F,Ga) co-doped ZnO thin film on glass substrate was fabricated via a simple non-alkoxide sol-gel spin-coating. Contrary to the F single doped ZnO thin film, the (F,Ga) co-doped thin film showed a significant reduce in electrical resistivity after a second post-heat-treatment in reducing environment. The resulting decrease in electrical resistivity with Ga co-doping is considered to be resulted from the increases both carrier density and mobility. The optical transmittance of the (F,Ga) co-doped thin film in the visible range showed higher transmittance with Ga co-doping compared with F single doped ZnO thin film.

키워드

참고문헌

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