Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improved Uniformity of Resistive Switching Characteristics in Ag/HfO2/Pt ReRAM Device by Microwave Irradiation Treatment

Microwave Irradiation 처리를 통한 Ag/HfO2/Pt ReRAM에서의 메모리 신뢰성 향상에 대한 연구

  • Kim, Jang-Han (Department of Electrical Materials Engineering, Kwangwoon University) ;
  • Nam, Ki-Hyun (Department of Electrical Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electrical Materials Engineering, Kwangwoon University)
  • 김장한 (광운대학교 전자재료공학과) ;
  • 남기현 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Received : 2014.01.14
  • Accepted : 2014.01.24
  • Published : 2014.02.01
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Abstract

The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on $HfO_2$ thin films have been demonstrated by using Ag/$HfO_2$/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with $HfO_2$ thin films as a transition layer. Compared to the as-deposited Ag/$HfO_2$/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/$HfO_2$/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (> $10^4$ sec) were achieved.

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References

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