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Codoped ZnO films by a co-spray deposition technique for photovoltaic applications

  • Zhou, Bin (School of Electrical, Computer and Energy Engineering, Arizona State University) ;
  • Han, Xiaofei (School of Electrical, Computer and Energy Engineering, Arizona State University) ;
  • Tao, Meng (School of Electrical, Computer and Energy Engineering, Arizona State University)
  • Received : 2014.11.06
  • Accepted : 2014.12.30
  • Published : 2014.06.25

Abstract

A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.

Keywords

References

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