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Dry thermal development of negative electron beam resist polystyrene

  • Con, Celal (Waterloo Institute for Nanotechnology (WIN), University of Waterloo) ;
  • Abbas, Arwa Saud (Waterloo Institute for Nanotechnology (WIN), University of Waterloo) ;
  • Yavuz, Mustafa (Waterloo Institute for Nanotechnology (WIN), University of Waterloo) ;
  • Cui, Bo (Waterloo Institute for Nanotechnology (WIN), University of Waterloo)
  • 투고 : 2013.06.14
  • 심사 : 2013.08.06
  • 발행 : 2013.06.25

초록

We report dry thermal development of negative resist polystyrene with low molecular weight. When developed on a hotplate at $350^{\circ}C$ for 30 min, polystyrene showed reasonable high contrast and resolution (30 nm half-pitch), but low sensitivity. Resist sensitivity was greatly improved at lower development temperatures, though at the cost of reduced contrast. In addition, we observed the thickness reduction due to thermal development was higher for larger remaining film thickness, implying the thermal development process is not just a surface process and the more volatile chains below the top surface may diffuse to the surface and get evaporated.

키워드

참고문헌

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피인용 문헌

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  2. Electron Beam Lithography on Irregular Surfaces Using an Evaporated Resist vol.8, pp.4, 2014, https://doi.org/10.1021/nn4064659
  3. Lift-off with solvent for negative resist using low energy electron beam exposure vol.32, pp.6, 2014, https://doi.org/10.1116/1.4901012
  4. Grafted Polystyrene Monolayer Brush as Both Negative and Positive Tone Electron Beam Resist vol.33, pp.20, 2017, https://doi.org/10.1021/acs.langmuir.7b00412