한국주조공학회지 (Journal of Korea Foundry Society)

  • 제33권4호
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  • Pages.157-161
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  • 2013
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  • 1598-706X(pISSN)
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  • 2288-8381(eISSN)
한국주조공학회 (Korea Foundry Society)
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다결정 실리콘 웨이퍼 직접제조에 대한 공정변수 영향

Effect of Processing Parameters on Direct Fabrication of Polycrystalline Silicon Wafer

  • 위성민 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 이진석 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 장보윤 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 김준수 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 안영수 (한국에너지기술연구원 에너지융합소재연구단) ;
  • 윤우영 (고려대학교 신소재공학부)
  • Wi, Sung-Min (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Lee, Jin-Seok (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Jang, Bo-Yun (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Kim, Joon-Soo (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Ahn, Young-Soo (Energy Materials and Convergence Research Department, Korea Institute of Energy Research) ;
  • Yoon, Woo-Young (Department of Materials Science and Engineering, Korea University)
  • 투고 : 2013.04.18
  • 심사 : 2013.07.29
  • 발행 : 2013.08.31
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초록

A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and large grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of 1cm due to incomplete solidification. In case of a solidification zone wieh a length of 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of silicon derived from the liquid-solid transformation in solidification zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the solid-liquid interface in the solidification zone. The silicon wafer could be continuously casted when the moving speed of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy bar was ${\geq}$ 9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study reports experimental findings on a new direct growth system for obtaining silicon wafers with both high quality and productivity, as a candidate for an alternate route for the fabrication of ribbon-type silicon wafers.

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