Bulletin of the Korean Chemical Society

  • 제34권9호
  • /
  • Pages.2563-2564
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  • 2013
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  • 0253-2964(pISSN)
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  • 1229-5949(eISSN)
대한화학회 (Korean Chemical Society)
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Single-Layer MoS2 Field Effect Transistor with Epitaxially Grown SrTiO3 Gate Dielectric on Nb-doped SrTiO3 Substrate

  • Kim, Woo-Hee (Process Development Team, System LSI Division, Samsung Electronics) ;
  • Son, Jong Yeog (Department of Applied Physics, Kyung Hee University)
  • 투고 : 2013.04.24
  • 심사 : 2013.06.10
  • 발행 : 2013.09.20
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