Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Single-Layer MoS2 Field Effect Transistor with Epitaxially Grown SrTiO3 Gate Dielectric on Nb-doped SrTiO3 Substrate

  • Kim, Woo-Hee (Process Development Team, System LSI Division, Samsung Electronics) ;
  • Son, Jong Yeog (Department of Applied Physics, Kyung Hee University)
  • Received : 2013.04.24
  • Accepted : 2013.06.10
  • Published : 2013.09.20
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References

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