Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Effect of Zn/Sn Different Raito of InZnSnO Thin Films Prepared by RF Magnetron Sputtering

RF 마그네트론 스퍼터를 사용하여 증착한 IZTO 박막의 Zn/Sn 비율에 따른 효과

  • Kim, Ki Hwan (School of Materials Science and Engineering, Yeungnam University) ;
  • Putri, Maryane (School of Materials Science and Engineering, Yeungnam University) ;
  • Koo, Chang Young (School of Materials Science and Engineering, Yeungnam University) ;
  • Lee, Jung-A (School of Materials Science and Engineering, Kyungpook National University) ;
  • Kim, Jeong-Joo (School of Materials Science and Engineering, Kyungpook National University) ;
  • Lee, Hee Young (School of Materials Science and Engineering, Yeungnam University)
  • Received : 2013.07.20
  • Accepted : 2013.07.24
  • Published : 2013.08.01
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Abstract

Indium Zinc Tin Oxide (IZTO) thin films were developed as an alternative to Indium Tin Oxide (ITO) thin films. ITO material which has been acknowledged with its low resistivity and optical transparency of 85-90% has been used as major transparent conducting oxide (TCO) materials. However, due to the limited source, high price, and instability problems at high temperature of indium, many researches has been focused on indium-saving TCO materials. Mason Group of Northwestern University was reported to expand the solubility limit up to 40% by co-doping with 1:1 ratio of $Zn^{+2}$ and $Sn^{+4}$ ions. In this study, the properties of IZTO thin films corresponding to Zn/Sn different ratio were investigated. In addition, the effect of substrate temperature variable to the structural, optical and electrical properties of IZTO thin films was investigated.

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References

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