한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제50권4호
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  • Pages.294-300
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  • 2013
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  • 1229-7801(pISSN)
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  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
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pH 조건에 따른 기공성 실리콘의 나노구조 및 광학적 특성의 변화

Variation of the Nanostructural and Optical Features of Porous Silicon with pH Conditions

  • 김효한 (인하대학교 신소재공학부) ;
  • 조남희 (인하대학교 신소재공학부)
  • Kim, Hyo-Han (Department of Materials Science and Engineering, Inha University) ;
  • Cho, Nam-Hee (Department of Materials Science and Engineering, Inha University)
  • 투고 : 2013.05.31
  • 심사 : 2013.07.16
  • 발행 : 2013.07.31
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초록

The effect of chemical treatments of porous silicon in organic solvents on its nanostructural and optical features was investigated. When the porous Si was dipped in the organic solvent with various PH values, the morphological, chemical, and structural properties of the porous silicon was sensitively affected by the chemical conditions of the solvents. The size of silicon nanocrystallites in the porous silicon decreased from 5.4 to 3.1 nm with increasing pH values from 1 to 14. After the samples were dipped in the organic solvents, the Si-O-H bonding intensity was increased while that of Si-H bonding decreased. Photoluminescence peaks shifted to a shorter wavelength region in the range of 583 to 735 nm as the pH value increased. PL intensity was affected by the size as well as the volume fraction of the nanocrystalline silicon in the porous silicon.

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참고문헌

  1. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, "The Structural and Luminescence Properties of Porous Silicon," J. Appl. Phys., 82 909-65 (1997). https://doi.org/10.1063/1.366536
  2. A. G. Cullis and L. T. Canham, "Visible Light Emission due to Quantum Size Effects in Highly Porous Crystalline Silicon," Nature, 353 335-38 (1991). https://doi.org/10.1038/353335a0
  3. C. Barrato, G. Faglia, E. Comini, G. Sbeveglieri, A. Taroni, V. La Ferrara, L. Quercia, and G. Di Francia, "A Novel Porous Silicon Sensor for Detection of sub-ppm $NO_2$ Concentration," Sens. Actuator B, 77 62-6 (2001). https://doi.org/10.1016/S0925-4005(01)00673-6
  4. T. Jalkanen, J. Tuura, E. Makila and J. Salonen, "Electro-Optical Porous Silicon Gas Sensors with Enhanced Selectivity," Sens. Actuator B, 147 100-04 (2010). https://doi.org/10.1016/j.snb.2010.03.005
  5. Y. Jiao and S. M. Weiss, "Design Parameters and Sensitivity Analysis of Polymer-Cladded Porous Silicon Waveguides for Small Molecule Detection," Biosens. Bioelectron., 25 1535-38 (2010). https://doi.org/10.1016/j.bios.2009.10.040
  6. J. Mizsei, "Gas Sensor Application of Porous Si Layers," Thin Solid Films, 515 8310-15 (2007). https://doi.org/10.1016/j.tsf.2007.03.033
  7. H. C. Shin, J. A. Corno, J. L. Gole, and M. Liu, "Porous Silicon Negative Electrodes for Rechargeable Lithium Batteries," J. Power Source, 139 314-20 (2005). https://doi.org/10.1016/j.jpowsour.2004.06.073
  8. A. Uhlir, "Electrolytic Shaping of Germanium and Silicon," Bell System Tech J., 35 333-47 (1956). https://doi.org/10.1002/j.1538-7305.1956.tb02385.x
  9. D. R. Turner, "Electropolishing Silicon in Hydrofluoric Acid Solutions," J. Electrochem. Soc., 105 402-08 (1957).
  10. H. H. Kim and N. H. Cho, "Morphological and Nanostructural Features of Porous Silicon Prepared by Electrochemical Etching," Nanoscale. Res. Lett., 7 408-15 (2012). https://doi.org/10.1186/1556-276X-7-408
  11. D. J. Blackwood and Y. Zhang, "The Effect of Etching Temperature on the Photoluminescence Emitted from, and the Morphology of, P-type Porous Silicon," Electrochim Acta, 48 623-30 (2003). https://doi.org/10.1016/S0013-4686(02)00731-4
  12. X. G. Zhang, "Morphology and Formation Mechanisms of Porous Silicon," J. Electrochem. Soc., 151 [1] C69-C80 (2004). https://doi.org/10.1149/1.1632477
  13. C. Steinem, A. Janshoff, V. S.-Y. Lin, N. H. Vlcker, and M. R. Ghadiri, "DNA Hybridization-Enhanced Porous Silicon Corrosion:Mechanistic Investrigations and Prospect for Optical Interferometric Biosensing," Tetrahedron., 60 11259-67 (2004). https://doi.org/10.1016/j.tet.2004.06.130
  14. S. H. Park, C. S. Ah, and K. W. Kim, "Spatially Selectiv Immobilization of Functional Materials onto Silicon Surfaces using Electrochemical Method," J. Kor. Electrochem. Soc., 12 40-6 (2009). https://doi.org/10.5229/JKES.2009.12.1.040
  15. J. Riikonen, M. Salomki, J. V. Wonderen, M. Kemell, W. Xu, S. Korhonen, M. Ritala, F. MacMillan, J. Salonen, and V. R. Lehto, "Surface Chemistry, Reactivity, and Pore Structure of Porous Silicon Oxidized by Various Methods," Langmuir, 28 10573-583 (2012). https://doi.org/10.1021/la301642w
  16. J. W. Park, J. G. Park, K. S. Kim, and H. S. Song, "The Effect of Surfactants in $NH_4OH$ on Silicon Surfaces and Particle Removal," Kor. J. Mater. Res., 9 872-77 (1999).
  17. G. H. Lee and S. I. Bae, "Particle Removal on Silicon Wafer Surface by Ozone-NF-$NH_4OH$ Sequence," Korean. Chem. Eng. Res., 45 203-07 (2007).
  18. H. L. Li, Y. Zhe, D. S. Xu, Y. Wan, L. Xia, and X. S. Zhao, "Vapor-Phase Silanization of Oxidized Porous Silicon for Stabilizing Composition and Photoluminescence," J. Appl. Phys., 105 114307-1-7 (2009). https://doi.org/10.1063/1.3133209
  19. P. Mengucci, G. Barucca, A. P. Caricato, A. Di Cristoforo, G. Leggieri, A. Luches, and G. Majnia, "Effects of Annealing on the Microstructure of Yttria-Stabilied Zirconia Thin films Deposited by Laser Ablation," Thin solid Films, 478 125-31 (2005). https://doi.org/10.1016/j.tsf.2004.10.046
  20. M. Jang and H. C Yang, "Structural Analysis of Semicrystalline Organic Thin Films by Using Atomic Force Microscopy(AFM) and Grazing-Incidence X-ray diffraction(GIXD)," Poly. Sci. Tech., 20 601-12 (2009).
  21. H. P. Klug, X-ray Diffravtion Procedures for Polycrystalline and Amophous Mateirals; pp.656-57, Wiley-Interscience, New York, 1954.
  22. A. A. Sirenko, J. R. Fox, I. A. Akimov, X. X. Xi, S. Rumimov, and Z. Liliental-Weber, "In Situ Raman Scattering Studies of the Amorphous and Crystalline Si Nanoparticles," Solid State Commun., 113 553-58 (2000). https://doi.org/10.1016/S0038-1098(99)00539-6
  23. Y. He, C. Z. Yin, G. X. Cheng, L. C. Wang, and X. Liu, "The Structure and Properties of Nanosize Crystalline Silicon Films," J. Appl. Phys., 65 797-803 (1994).
  24. H. Xia, Y. L. He, L. C. Wang, W. Zhang, X. N. Liu, X. K. Zhang, and D. Feng, "Phonon Mode Study on Si Nanocrystals Using Micro-Raman Spectroscopy," J. Appl. Phys., 78 6705-08 (1995). https://doi.org/10.1063/1.360494
  25. M. Scheib, B. Schrder, and H. Oechsner, "Depostion of Nanocrystalline Silicon Films (nc-Si:H) from A Pure ECWR-$SiH_4$ Plasma," J. Non-cryst. Solids, 198-200 895-98 (1996). https://doi.org/10.1016/0022-3093(96)00078-6
  26. X. L. Wu, G. G. Siu, Y. Gu, N. Tang, T. Gao, and X. M. Bao, "On the Origin of Strong Visible Photoluminescence in a Ge/Porous Si Structure," Appl. Phys. Lett., 74 827-29 (1999). https://doi.org/10.1063/1.123381
  27. F. A. Cotton, G. Wilkinson, C. A. Murillo, and M. Bochmann, Advanced Inorganic Chemistry 6th ed; pp. 268-69 Wiley-Interface, New York, 1999.
  28. H. S. Kwack, Y. Sun, Y. H. Cho, N. M. Park, and S. J. Park, "Anomalous Temperature Dependence of Optical Emission in Visible-Light-Emitting Amophous Silicon Quantum Dots," Appl. Phys. Lett., 83 2901-03 (2003). https://doi.org/10.1063/1.1613993