Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Varistor Properties and Aging Behavior of ZnO-V2O5-MnO2-Co3O4-La2O3 Ceramics Modified with Various Additives (Cr, Nb, Dy, Bi)

  • Nahm, Choon-Woo (Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University) ;
  • Lee, Sun-Kwon (Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University) ;
  • Heo, Jae-Seok (Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University) ;
  • Lee, Don-Gyu (Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University) ;
  • Park, Jong-Hyuk (Korea Electrotechnology Research Institute) ;
  • Cho, Han-Goo (Korea Electrotechnology Research Institute)
  • Received : 2013.03.15
  • Accepted : 2013.05.16
  • Published : 2013.08.25
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Abstract

The effects of additives (Cr, Nb, Dy, and Bi) on microstructure, electrical properties, dielectric characteristics, and aging behavior of $ZnO-V_2O_5-MnO_2-Co_3O_4-La_2O_3$ (ZVMCL) ceramics were systematically investigated. The phase formed in common for all ZVMCL ceramics modified with various additives consisted of ZnO grain as a main phase, and $Zn_3(VO_4)_2$ and $ZnV_2O_4$ as the secondary phases. The sintered density and average grain size were in the range of $5.4-5.54g/cm^3$ and $3.7-5.1{\mu}m$, respectively. The ZVMCL ceramics modified with Cr exhibited the highest breakdown field (6,386 V/cm) and the ZVMCL ceramics modified with Nb exhibited the lowest breakdown field (3,517 V/cm). All additives enhanced the nonlinear coefficient (${\alpha}$), by a small or large margin, in particular, additives such as Bi and Nb noticeably increased the nonlinear coefficient, with ${\alpha}=25.5$ and ${\alpha}=23$, respectively. However, on the whole, all additives did not improve the stability against a DC stress, compared with ZVMCL ceramics.

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