Transactions on Electrical and Electronic Materials

  • 제14권4호
  • /
  • Pages.177-181
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  • 2013
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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A Study of the Relationship Analysis of Power Conversion and Changed Capacitance in the Depletion Region of Silicon Solar Cell

  • Kim, Do-Kyeong (Department of Technical Research, GFTEK Corporation) ;
  • Oh, Yeong-Jun (Department of Technical Research, GFTEK Corporation) ;
  • Kim, Sang-Hyun (Department of Executive, I.T.C. Corporation) ;
  • Hong, Kyeong-Jin (Department of Electronic and Optical Communications Engineering, Gwang-ju University) ;
  • Jung, Haeng-Yeon (Department of Photonic Research and Business, K.O.P.T.I.) ;
  • Kim, Hoy-Jin (Department of Photonic Research and Business, K.O.P.T.I.) ;
  • Jeon, Myeong-Seok (Department of Energy Storage, K.I.E.R.)
  • 투고 : 2012.11.19
  • 심사 : 2013.04.27
  • 발행 : 2013.08.25
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초록

In this paper, silicon solar cells are analyzed regarding power conversion efficiency by changed capacitance in the depletion region. For the capacitance control in the depletion region of silicon solar cell was applied for 10, 20, 40, 80, 160 and 320 Hz frequency band character and alternating current(AC) voltage with square wave of 0.2~1.4 V. Academically, symmetry formation of positive and negative change of the p-n junction is similar to the physical effect of capacitance. According to the experiment result, because input of square wave with alternating current(AC) voltage could be observed to changed capacitance effect by indirectly method through non-linear power conversion (Voltage-Current) output. In addition, when input alternating current(AC) voltage in the silicon solar cell, changed capacitance of depletion region with the forward bias condition and reverse bias condition gave a direct effect to the charge mobility.

키워드

참고문헌

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피인용 문헌

  1. Nanopyramid Formation by Ag Metal-Assisted Chemical Etching for Nanotextured Si Solar Cells vol.16, pp.4, 2015, https://doi.org/10.4313/TEEM.2015.16.4.206
  2. Effect of incidence angle on the electrical parameters of vertical parallel junction silicon solar cell under frequency domain vol.71, pp.5, 2016, https://doi.org/10.3103/S0027134916050088