Bulletin of the Korean Chemical Society

  • 제34권6호
  • /
  • Pages.1845-1847
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  • 2013
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  • 0253-2964(pISSN)
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  • 1229-5949(eISSN)
대한화학회 (Korean Chemical Society)
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Correlation Between Lateral Photovoltaic Effect and Conductivity in p-type Silicon Substrates

  • 투고 : 2013.03.11
  • 심사 : 2013.03.26
  • 발행 : 2013.06.20
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초록

The lateral photovoltaic effect (LPE) can be observed in semiconductors by irradiating a light spot position between electrodes on sample's surface. Because lateral photovoltaic voltage (LPV) is sensitively changed by light spot position, a LPE device has been tried as a position-sensitive detector. This study discusses the correlation between LPV and conductivity in p-type silicon and nano-structured Au deposited p-type silicon (nano-Au silicon), respectively. Conductivity measurement of the sample was carried out using the four-wire method to eliminate contact resistance, and conductivity dependence on LPV was simultaneously measured by changing the light irradiation position. The result showed a strong correlation between conductivity and LPV in the p-type silicon sample. The correlation coefficient was 0.87. The correlation coefficient between LPV and conductivity for the nano-Au silicon sample was 0.41.

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피인용 문헌

  1. Unconventional but tunable phase transition above the percolation threshold by two-layer conduction in electroless-deposited Au nanofeatures on silicon substrate vol.26, pp.50, 2015, https://doi.org/10.1088/0957-4484/26/50/505202