Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Oxygen on the Properties of Mg-doped Zinc Tin Oxide Films Prepared by rf Magnetron Sputtering

rf 마그네트론 스퍼터링으로 증착한 Mg-doped Zinc Tin Oxide막의 특성에 미치는 산소의 영향

  • Park, Ki Cheol (Department of Semiconductor Engineering and ERI, Gyeongsang National University) ;
  • Ma, Tae Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
  • 박기철 (경상대학교 반도체공학과 및 공학연구원) ;
  • 마대영 (경상대학교 전기공학과 및 공학연구원)
  • Received : 2013.04.17
  • Accepted : 2013.05.03
  • Published : 2013.05.01
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Abstract

Mg-doped zinc tin oxide (ZTO:Mg) thin films were prepared on glasses by rf magnetron sputtering. $O_2$ was introduced into the chamber during the sputtering. The optical properties of the films as a function of oxygen flow rate were studied. The crystal structure, elementary properties, and depth profiles of the films were investigated by X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Bottom-gate transparent thin film transistors were fabricated on $N^+$ Si wafers, and the variation of mobility, threshold voltage etc. with the oxygen flow rate were observed.

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References

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