Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Investigation on the Stability Enhancement of Oxide Thin Film Transistor

산화물반도체 트랜지스터 안정성 향상 연구

  • Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
  • 이상렬 (청주대학교 반도체공학과)
  • Received : 2013.04.21
  • Accepted : 2013.04.24
  • Published : 2013.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

Keywords

References

  1. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature, 432, 488 (2004). https://doi.org/10.1038/nature03090
  2. E. Chong, Y. S. Chun, and S. Y. Lee, Appl. Phys. Lett., 96, 152102 (2010). https://doi.org/10.1063/1.3387819
  3. E. Chong, Y. S. Chun, and S. Y. Lee, Electrochem. Solid-State Lett., (inpress)
  4. E. Fortunato, A. Pimentel, A. Goncalve, A. Marques, and R. Martins, Thin Solid Film, 502, 104 (2006). https://doi.org/10.1016/j.tsf.2005.07.311
  5. B. D. Ahn, J. H. Kim, H. S. Kang, C. H. Lee, S. H. Oh, K. W. Kim, G. E. Jang, and S. Y. Lee, Thin Solid Film, 516, 1382 (2008). https://doi.org/10.1016/j.tsf.2007.03.072
  6. H. S. Kim, P. D. Byrne, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc., 130, 12580 (2008). https://doi.org/10.1021/ja804262z
  7. J. P. Chang, Y. S. Lin, S. Berger, A. Kepten, R. Bloom, and S. Levy, J. Vac. Sci. Technol. B, 19, 2137 (2001). https://doi.org/10.1116/1.1415513
  8. G. H. Kim, W. H. Jeong, B. D. Ahn, H. S. Shin, H. J. Kim, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, Appl. Phys. Lett., 96, 163506 (2010). https://doi.org/10.1063/1.3413939