한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제26권5호
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  • Pages.341-346
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  • 2013
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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박막트랜지스터의 문턱전압 이동 시뮬레이션 방안

Simulation Method of Threshold Voltage Shift in Thin-film Transistors

  • 정태호 (서울과학기술대학교 전자IT미디어공학과)
  • Jung, Taeho (Department of Electronic and IT Media Engineering, Seoul National University of Science and Technology)
  • 투고 : 2013.04.21
  • 심사 : 2013.04.24
  • 발행 : 2013.05.01
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초록

Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TFT) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT's behavior models implemented in SPICE tools, it can be easily added to them.

키워드

참고문헌

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피인용 문헌

  1. Modeling of stretched-exponential and stretched-hyperbola time dependence of threshold voltage shift in thin-film transistors vol.117, pp.14, 2015, https://doi.org/10.1063/1.4917209