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Efficiency Improvement in Screen-printed Crystalline Silicon Solar Cell with Light Induced Plating

광유도도금을 이용한 스크린 프린팅 결정질 실리콘 태양전지의 효율 향상

  • Jeong, Myeong Sang (Graduate School of Green Energy Technology, Chungnam National University) ;
  • Kang, Min Gu (Korea Institute of Energy Research, Solar Energy Research Center) ;
  • Chang, Hyo Sik (Graduate School of Green Energy Technology, Chungnam National University) ;
  • Song, Hee-Eun (Korea Institute of Energy Research, Solar Energy Research Center)
  • 정명상 (충남대학교 녹색에너지기술전문대학원) ;
  • 강민구 (한국에너지기술연구원 태양에너지연구단) ;
  • 장효식 (충남대학교 녹색에너지기술전문대학원) ;
  • 송희은 (한국에너지기술연구원 태양에너지연구단)
  • Received : 2013.01.17
  • Accepted : 2013.02.05
  • Published : 2013.03.01

Abstract

Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.

Keywords

References

  1. Christiana Honsberg and Stuart Bowden, PVCDROM, http://www.pveducation.org/pvcdrom
  2. J. H. Hong, M. G. Kang, N, S, Kim, and H. E. Song, J. KIEEME. 25, 1015 (2012).
  3. K. K. Hong, S. B. Cho, J. Y. Huh, H. J. Park, and J. W. Jeong, Met. Mater. Int., 15, No.2, 307-312 (2009). https://doi.org/10.1007/s12540-009-0307-1
  4. A. Mette, Albert-Ludwigs-Universitat Freiburg im Breisgau, Freiburg im Breisgau, 105 (2007).
  5. D. Pysch, A. Mette, A. Filipovic, and S. W. Glunz, Prog. Photovolt: Res. Appl., 17, 101 (2009). https://doi.org/10.1002/pip.855
  6. H. Gerischer, Electrochimica Acta, 35, 1677 (1990). https://doi.org/10.1016/0013-4686(90)87067-C
  7. J. H. Lee, Y. H. Lee, J. Y. Ahn, and J. W. Jeong, Sol. Energ. Mat. Sol. C., 95, 22 (2011). https://doi.org/10.1016/j.solmat.2010.04.065
  8. A. Ebong, Ian B. Cooper, Brian C. Rounsaville, A. Rohatgi, M. Dovrat, E. Kritchman, D. Brusilovsky, and A. Benichou, IEEE. Electr. Dev. L.32, 779 (2011). https://doi.org/10.1109/LED.2011.2131115
  9. W. S. Lee, Thesis, p. 31-32, Cheongju University, Cheongju (2010).
  10. J. Bartsch, M. Kamp, M. Hoteis S. W. Glunz A. Gombert,b, and H. Reinecke, ECS, Elec. Soc. S.158, H651 (2011). https://doi.org/10.1149/1.3571266
  11. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (John Wiley & Sons, New Jersey, 2006) p. 146.
  12. E. G. Woelk, H. Krautle, and H. Beneking, IEEE Trans. Elec. Dev., ED-33, 19 (1986).
  13. L. K. Mak, C. M. Rogers, and D. C. Northrop, J. Phys. E: Sci. Instr., 22, 317 (1989). https://doi.org/10.1088/0022-3735/22/5/010

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