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The structural characteristics of ZnO thin films for TFT driver circuit

박막트랜지스터 구동회로용 ZnO 박막의 구조적 특성에 관한 연구

  • 손지훈 (SK 하이닉스 DRAM개발본부 MM소자F팀) ;
  • 김상현 (한국해양대학교 전기전자공학부) ;
  • 김홍승 (한국해양대학교 나노반도체공학과) ;
  • 장낙원 (한국해양대학교 전기전자공학부)
  • Received : 2012.10.31
  • Accepted : 2012.11.08
  • Published : 2013.01.31

Abstract

The effect of sputtering condition on the structural properties of ZnO thin films grown by RF magnetron sputtering system was investigated for TFT driver circuit. ZnO thin films were grown with ZnO target varying RF power and working pressure. Structural properties were investigated by X-ray diffraction (XRD) and atomic force microscope (AFM). The ZnO thin films have sufficient crystallinity on the 100W RF power. But, the surface roughness of ZnO films was increased as increased RF power. As increased working pressure from 5 mTorr to 15 mTorr, a full width at half maximum (FWHM) of ZnO (002) peak was increased.

RF 마그네트론 스퍼터링법의 스퍼터링 조건에 따른 TFT 구동회로를 위한 ZnO 박막의 구조적 특성에 관해 연구하였다. ZnO 박막은 RF 파워 및 증착압력을 변화시킴으로서 성장시켰다. 구조적 특성은 X-선 회절 분석기(XRD)와 원자력간 현미경(AFM)에 의해 분석되었다. ZnO 박막은 100W의 RF 파워에서 충분한 결정도를 가졌다. 그러나 RF 파워가 증가함에 따라 ZnO 박막의 표면 거칠기가 증가하였고 증착압력이 5mTorr에서 15mTorr로 증가함에 따라 ZnO(002) 피크의 반치폭(FWHM)이 증가하였다.

Keywords

References

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