DOI QR코드

DOI QR Code

Effect of V/III Ratio Variation on the Properties of AlN Epilayers in HVPE

HVPE법에 의해 성장된 AlN 에피층의 V/III비에 따른 특성변화

  • Received : 2013.11.06
  • Accepted : 2013.12.01
  • Published : 2013.12.27

Abstract

AlN epilayers were grown on a c-plane sapphire substrate using hydride vapor phase epitaxy (HVPE). A series of AlN epilayers were grown at $1120^{\circ}C$ with V/III ratios 1.5, 2.5 and 3.5, and the influence of V/III ratio on their properties was investigated. As the V/III ratio was increased, the surface roughness (RMS roughness), Raman shift of $E_2$ high peaks and full-width at half-maximum (FWHM) of symmetrical (002) & asymmetrical (102) of the AlN epilayers increased. However, the intensities of the Raman $E_2$ high peaks were reduced. This indicates that the crystal quality of the grown AlN epilayers was degraded by activation of the parasitic reaction as the V/III ratio was increased. Smooth surface, stress free and high crystal quality AlN epilayers were obtained at the V/III ratio of 1.5. The crystal quality of AlNepilayers is worsened by the promotion of three-dimensional (3D) growth mode when the flow of $NH_3$ is high.

Keywords

References

  1. M. Balaji, A. Claudel, V. Fellmann, I. Gelard, E. Blanquet, R. Boichot, A. Pierret B. Attal-Tretout, A. Crisci, S. Coindeau, H. Roussel, D. Pique, K. Baskar and M. Pons, J. Alloy. Comp., 526, 103 (2012). https://doi.org/10.1016/j.jallcom.2012.02.111
  2. Kohei Fujita, Kazuteru Okuura, Hideto Miyake, Kazumasa Hiramatsu, and Hideki Hirayama, Phys. Status Solidi C, 8(5), 1483 (2011). https://doi.org/10.1002/pssc.201001130
  3. Yuta Takagi, Reina Miyagawa, Hideto Miyake and Kazumasa Hiramatsu, Phys. Status Solidi C, 9(3-4), 576 (2012). https://doi.org/10.1002/pssc.201100797
  4. Toru Nagashima, Manabu Harada, Hiroyuki Yanagi, Hiroyuki Fukuyama, Yoshinao Kumagai, Akinori Koukitu and Kazuya Takada, J. Cryst. Growth, 305, 355 (2007). https://doi.org/10.1016/j.jcrysgro.2007.04.001
  5. Yoshinao Kumagai, YuukiEnatsu, MasanariIshizuki, YukiKubota, JumpeiTaj ima, Toru Nagashima, HisashiMurakami, KazuyaTakada and AkinoriKoukitu, J. Cryst. Growth, 312, 2530 (2010). https://doi.org/10.1016/j.jcrysgro.2010.04.008
  6. Yoshino Kumagai, Hiroshi Shikauchi, Jun Kikuchi, Takayoshi Yamane, Yoshihiro Kangawa and Akinori Koukitu, Proc. 21st century COE Joint Workshop on Bulk Nitrides IPAP Conf. Series 4 pp.9-13 (2003)
  7. S. Corekc-i, M.K.Ozturk, M.Cakmak, S.Ozc-elik and E.Ozbay, Mater. Sci. Semicond. Process Volume 15, Issue 1, pp 32-36, February (2012). https://doi.org/10.1016/j.mssp.2011.06.003
  8. Masataka Imura, Kiyotaka Nakano, Naoki Fujimoto, Narihito Okada, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tadashi Noro, Takashi Takagi and Akira Bandoh, Jpn. J. Appl. Phys., 45(11), 8639 (2006). https://doi.org/10.1143/JJAP.45.8639
  9. Yu-Huai Liu, Tomoaki Tanabe, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mutsuhiro Tanaka and Toshihiko Masa, Jpn. J. Appl. Phys., 44(17), L505 (2005). https://doi.org/10.1143/JJAP.44.L505
  10. D. G. Zhao, J. J. Zhu, D. S. Jiang, Hui Yang, J. W. Liang, X. Y. Li and H. M. Gong, J. Cryst. Growth, 289, 72 (2006). https://doi.org/10.1016/j.jcrysgro.2005.11.083
  11. K. H. Chang, M. S. Kwon and S. I. Cho, J. Institute of Industrial Technology, 12, 123 (2004).
  12. J. Bai, T.Wang, P. J. Parbrook, K. B. Lee and A. G. Cullis, J. Cryst. Growth, 282, 290 (2005). https://doi.org/10.1016/j.jcrysgro.2005.05.023
  13. D. G. Zhao, S. J. Xu, M. H. Xie and S. Y. Tong, Appl phys Lett., 83(4), 28 july (2003).
  14. J. H. Yang, S. M. Kang, D. V. Dinh and D. H. Yoon, Thin Solid Films, 517, 5057 (2009). https://doi.org/10.1016/j.tsf.2009.03.089