References
- W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, T. Ogura, and H. Ohashi, "High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior", IEEE Trans. Electron Devices, Vol. 50, no. 12, pp.2528 - 2531, 2003. https://doi.org/10.1109/TED.2003.819248
- W. S. Tan, P. A. Houston, P. J. Parbrook, G. Hill and R. J. Airey, "Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors" Journal of Physics D: Applied Physics Vol. 35, no. 7, pp.595 -598, 2002. https://doi.org/10.1088/0022-3727/35/7/304
- Q. Feng, Y. Hao and Y.-Z. Yue, "The reduction of gate leakage of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors by N2 plasma pretreatment" Semiconductor Science and Technology, Vol. 24, no. 2, p.025030, 2009. https://doi.org/10.1088/0268-1242/24/2/025030
- K. Saarinen, T. Laine, S. Kuisma, J. Nissilä, P. Hautojärvi, L. Dobrzynski, J. M. Baranowski, K. Pakula, R. Stepniewski, M. Wojdak, A. Wysmolek, T. Suski, M. Leszczynski, I. Grzegory, and S. Porowski, "Observation of Native Ga Vacancies in GaN by Positron Annihilation" Phys. Rev. Lett. Vol. 79, no.16, pp.3030-3033, 1997. https://doi.org/10.1103/PhysRevLett.79.3030
- A. Uedono, S. F. Chichibu, Z. Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai and S. Nakamura, "Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams", Journal of Applied Physics, Vol. 90. no. 1, pp. 181- 186, 2001 https://doi.org/10.1063/1.1372163
- T. L. Tansley and R. J. Egan, "Point-defect energies in the nitrides of aluminum, gallium, and indium", Physical Review B, Vol. 45, no. 19, pp.10942-10950, 1992. https://doi.org/10.1103/PhysRevB.45.10942
- P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, S. Porowski, P. Bogusławski, J. Bernholc, J. C. Chervin, A. Polian, and T. D. Moustakas, "Towards the identification of the dominant donor in GaN", Physical Review letters, Vol. 75, no. 2, pp.296-299, 1995. https://doi.org/10.1103/PhysRevLett.75.296
- D. Meister, et.al, "A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films" Journal of Applied Physics, Vol. 88. no. 4, pp.1811-1817, 2000. https://doi.org/10.1063/1.1305549
- J. E. Van Nostrand, J. Solomon, A. Saxler, Q.-H. Xie, D. C. Reynolds, and D. C. Look, "Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gassource molecular beam epitaxy" Journal of Applied Physics, Vol. 87. no. 12, pp.8766-8772, 2000. https://doi.org/10.1063/1.373608
- J. Kotani, S. Kasai, T. Hashizume and H. Hasegawa, "Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors", Journal of Vacuum Science & Technology B, Vol. 23, no. 4, pp.1799-1807, 2005. https://doi.org/10.1116/1.1942507
- S. Tanaka, Q. Hu, V. Grishmanov and T. Yoneoka, "Thermoluminescence on polycrystalline AlN after γ and electron irradiation", Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 141, no. 1-4, pp.547-551, 1998. https://doi.org/10.1016/S0168-583X(98)00058-5
- W. Lua, V. Kumara, R. Schwindta, E. Pinerb and I. Adesida, "A comparative study of surface passivation on AlGaN/GaN HEMTs" Solid-State Electronics, Vol. 46, no 9, pp.1441-1444, 2002. https://doi.org/10.1016/S0038-1101(02)00089-8
- J. Lee, D. Liu, H. Kim, and W. Lu, "Postprocessing annealing effects on direct current and microwave performance of AlGaN/GaN high electron mobility transistors", Appl. Phys. Lett., Vol. 85. no. 13, pp.2631-2633, 2004. https://doi.org/10.1063/1.1797556
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