Transactions of the Society of Information Storage Systems (정보저장시스템학회논문집)

The Society of Information Storage Systems (정보저장시스템학회)
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Characteristic of Graphene Oxide based Device Assembled by Dielectrophoresis

유전 영동을 통한 산화 그래핀 소자 특성

  • Received : 2012.09.10
  • Accepted : 2012.09.24
  • Published : 2012.09.25
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Abstract

Graphene oxide, which is exfoliated by oxidant from graphite, is the material for solving the problem of mass production and positioning. We made graphene oxide based devices by dielectrophoresis, studied and controlled factors which can affect the characteristic of graphene oxide channel. Graphene oxide channel assembled by dielectrophoresis can be constructed differently by various frequency options. We confirmed the change of gate characteristics and I-V characteristics in the range from 80K to 300K temperature.

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References

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