Transactions of the Korean Society of Mechanical Engineers A (대한기계학회논문집A)

The Korean Society of Mechanical Engineers (대한기계학회)
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Thermal Damage Characterization of Silicon Wafer Subjected to CW Laser Beam

CW 레이저 조사에 의한 실리콘 웨이퍼의 손상 평가

  • Received : 2012.02.28
  • Accepted : 2012.07.18
  • Published : 2012.10.01
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Abstract

The objective of this study is to evaluate the thermal damage characterization of a silicon wafer subjected to a CW laser beam. The variation in temperature and stress during laser beam irradiation has been predicted using a three-dimensional numerical model. The simulation results indicate that the specimen might crack when a 93-$W/cm^2$ laser beam is irradiated on the silicon wafer, and surface melting can occur when a 186-$W/cm^2$ laser beam is irradiated on the silicon wafer. In experiments, straight cracks in the [110] direction were observed for a laser irradiance exceeding 102 $W/cm^2$. Furthermore, surface melting was observed for a laser irradiance exceeding 140 $W/cm^2$. The irradiance for surface melting is less than that in the simulation results because multiple reflections and absorption of the laser beam might occur on the surface cracks, increasing the absorbance of the laser beam.

본 연구의 목적은 CW 레이저 조사에 의한 실리콘 웨이퍼의 손상을 평가하는 것이다. 먼저, 레이저 조사에 의한 온도 및 응력 변화를 3 차원 유한요소해석 모델을 이용하여 예측하였다. 해석 결과, 93 $W/cm^2$의 레이저 빔이 조사되었을 때, 실리콘 웨이퍼의 표면의 응력은 약 140 MPa 까지 증가하였으며 균열이 발생할 것으로 예측되었다. 레이저 강도가 더욱 증가하여 186 $W/cm^2$ 일 때에는 실리콘 웨이퍼의 표면의 온도는 $1432^{\circ}C$까지 증가하였으며 표면부가 용융될 것으로 예상되었다. 실험 결과, 102 $W/cm^2$ 의 레이저 빔이 실리콘 웨이퍼 표면에 조사되었을 때 표면부에 균열이 발생하였고, 레이저 빔의 강도가 더욱 증가하여 140 $W/cm^2$ 일때 표면부에서 용융이 발생하였다. 용융이 발생하는 레이저 빔의 강도는 유한요소해석 결과보다 낮은 값이었으며 이는 표면부에서 생성된 균열에 의해 레이저 빔의 다중반사와 다중흡수가 일어나 레이저 빔의 흡수량이 증가하였기 때문이다.

Keywords

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