참고문헌
- S. I. Vlaskina, "Silicon Carbide LED," Semiconductor Physics, Quantum Electronics & Optoelectronics, 5 [1] 71-5 (2001).
- A. Elasser and T. P. Chow, "Silicon Carbide Benefits and Advantages for Power Electronics Circuits and Systems," Proc. IEEE, 90 [6] 969-86 (2001).
- B. Ozpineci, L. M. Tolbert, S. K. Islam, and M. Hasanuzzaman, "Effects of Silicon Carbide (SiC) Power Devices on HEV PWM Inverter Losses," pp. 1061-6 in the Proceeding of the Industrial Electronics Soc. Annu. Conf., IEEE, Denver, Colorado, 2001.
- S. S. Hwan, S. W. Park, J. H. Han, K. S. Han, and C. M. Kim, "Mechanical Properties of Porous Reaction Bonded Silicon Carbide," J. Kor. Ceram. Soc., 39 [10] 948-54 (2002). https://doi.org/10.4191/KCERS.2002.39.10.948
-
B. V. Manoj Kumar, M. H. Roh, Y. W. Kim, W. J. Kim, S. W. Park, and W. S. Seo, "Effect of Additive Composition on Microstructure and Mechanical Properties of SiC Ceramics Sintered with Small Amount of
$RE_2O_3$ (RE: Sc, Lu, Y) and AlN," J. Mater. Sci., 44 5939-43 (2009). https://doi.org/10.1007/s10853-009-3818-8 -
G. M. Kim, G. S. Cho, and S. W. Park, "Effects of
${\beta}$ -SiC Particle Seeds on Morphology and Size of High Purity${\beta}$ -SiC Powder Synthesized using Sol-Gel Process," J. Kor. Ceram. Soc., 46 [5] 528-33 (2009). https://doi.org/10.4191/KCERS.2009.46.5.528 -
L. Jiang, R. Cheung. R. Brown, and A. Mount, "Inductively Coupled Plasma Etching of SiC in
$SF_6/O_2$ and Etch-induced Surface Chemical Bonding Modifications," J. Appl. Phys., 93 [3] 1376-83 (2003). https://doi.org/10.1063/1.1534908 -
N. J. Dartnell, M. C. Flowers, R. Greef, and J. Zhu, "Reactive Ion Etching of Silicon Carbide (
$Si_{x}C_{1-x}$ )," Vac., 46 [4] 349-55 (1995). https://doi.org/10.1016/0042-207X(94)00077-8 -
B. W. Kim, S. M. Kong, and B. T. Lee, "Modeling SiC Etching in
$C_2F_6/O_2$ Inductively Coupled Plasma Using Neural Networks," J. Vac. Sci. Technol. A, 20 [1] 146-52 (2002). https://doi.org/10.1116/1.1427882 -
Ho, Pauline, Johannes, E. Justine, Buss, J. Richard, and Meeks, Ellen, "Modeling the Plasma Chemistry of
$C_2F_6\;and\;CHF_3$ Etching of Silicon Dioxide, with Comparisons to Etch Rate and Diagnostic Data," J. Vac. Sci. Technol. A, 19 [5] 2344-67 (2001). https://doi.org/10.1116/1.1387048 - A. J. van Roosmalen, "Review: Dry Etching of Silicon Oxide," Vac., 34 429-36 (1984). https://doi.org/10.1016/0042-207X(84)90079-4
-
M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger, P. G. M. Sebel, and G. S. Oehrlein, "Study of the
$SiO_2-to-Si_3N_4$ Etch Selectivity Mechanism in Inductively Coupled fluorocarbon Plasmas and a Comparison with the$SiO_2$ -to-Si mechanism," J. Vac. Sci. Technol. A, 17 [1] 26-37 (1999). https://doi.org/10.1116/1.582108 -
M. Matsui, T. Tatsumi, and M. Sekine, "Observation of Surface Reaction Layers Formed in Highly Selective
$SiO_2$ Etching," J. Vac. Sci Technol. A, 19 [4] 1282-8 (2001). https://doi.org/10.1116/1.1383064 -
K. Kurihara, Y. Yamaoka, K. Karehashi, and M. Sekine, "Measurements of Desorbed Products by Plasma Beam Irradiation on
$SiO_2$ ," J. Vac. Sci. Technol. A, 22 [6] 2311-14 (2004). https://doi.org/10.1116/1.1795830 -
N. R. Rueger, J. J. Beulens, M. Schaepkens, M. F. Doemling, J. M. Mirza, T. E. F. M. Standaert, and G. S. Oehrlein, "Role of Steady State Fluorocarbon Films in the Etching of Silicon Dioxide using
$CHF_3$ in an Inductively Coupled Plasma Reactor," J. Vac. Sci. Technol. A, 15 [4] 1881-9 (1997). https://doi.org/10.1116/1.580655 - T. E. F. M. Standaert, C Hedlund, E. A. Joseph, and G.S. Oehrlein, "Role of Fluorocarbon Film Formation in the Etching of Silicon, Silicon Dioxide, Silicon Nitride, and Amorphous Hydrogenated Silicon Carbide," J. Vac. Sci. Technol. A, 22 [1] 53-60 (2004). https://doi.org/10.1116/1.1626642
- D. M. Kim, S. H. Lee, W. B. Alexander, K. B. Kim, Y. S. Oh, and S. M. Lee, "X-ray Photoelectron Spectroscopy Study on the Interaction of Yttrium-Aluminum Oxide with Fluorine-Based Plasma," J. Am. Ceram. Soc., 94 [10] 3455-9 (2011). https://doi.org/10.1111/j.1551-2916.2011.04589.x
-
T. Tatsumi, M. Matsui, M. Okigawa, and M. Sekine, "Control of Surface Reactions in High-Performance
$SiO_2$ Etching," J. Vac. Sci. Technol. B, 18 [4] 1897-1902 (2000). https://doi.org/10.1116/1.1305807 - A. J. van Roosmalen, J. A. G. Baggerman, and S. F. H. Brader, "Dry Etching for VLSI," pp. 99-135, Plenum Press, New York and London, 1991.
- B. Vincent Crist, "Advanced Peak-Fitting of Monochromatic XPS Spectra," J. Surf. Anal., 4 [3] 428-34 (1998).
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