Journal of information and communication convergence engineering

  • 제10권2호
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  • Pages.200-204
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  • 2012
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  • 2234-8255(pISSN)
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  • 2234-8883(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
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The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution

  • Jung, Hak-Kee (Department of Electronic Engineering, Kunsan National University)
  • 투고 : 2012.03.20
  • 심사 : 2012.04.20
  • 발행 : 2012.06.30
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초록

This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.

키워드

참고문헌

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  5. 이중게이트 MOSFET의 채널구조에 따른 항복전압 변화 vol.17, pp.3, 2012, https://doi.org/10.6109/jkiice.2013.17.3.672
  6. Gate All Around Metal Oxide Field Transistor: Surface Potential Calculation Method including Doping and Interface Trap Charge and the Effect of Interface Trap Charge on Subthreshold Slope vol.13, pp.5, 2012, https://doi.org/10.5573/jsts.2013.13.5.530