Advances in materials Research

  • 제1권1호
  • /
  • Pages.83-92
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  • 2012
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  • 2234-0912(pISSN)
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  • 2234-179X(eISSN)
테크노프레스 (Techno-Press)
권호 표지
DOI QR코드

DOI QR Code

Effect of under-bump-metallization structure on electromigration of Sn-Ag solder joints

  • Chen, Hsiao-Yun (Department of Materials Science and Engineering, National Chiao Tung University) ;
  • Ku, Min-Feng (Department of Materials Science and Engineering, National Chiao Tung University) ;
  • Chen, Chih (Department of Materials Science and Engineering, National Chiao Tung University)
  • 투고 : 2011.08.31
  • 심사 : 2012.03.09
  • 발행 : 2012.03.25
⟨ 이전 논문 다음 논문 ⟩

초록

The effect of under-bump-metallization (UBM) on electromigration was investigated at temperatures ranging from $135^{\circ}C$ to $165^{\circ}C$. The UBM structures were examined: 5-${\mu}m$-Cu/3-${\mu}m$-Ni and $5{\mu}m$ Cu. Experimental results show that the solder joint with the Cu/Ni UBM has a longer electromigration lifetime than the solder joint with the Cu UBM. Three important parameters were analyzed to explain the difference in failure time, including maximum current density, hot-spot temperature, and electromigration activation energy. The simulation and experimental results illustrate that the addition 3-${\mu}m$-Ni layer is able to reduce the maximum current density and hot-spot temperature in solder, resulting in a longer electromigration lifetime. In addition, the Ni layer changes the electromigration failure mode. With the $5{\mu}m$ Cu UBM, dissolution of Cu layer and formation of $Cu_6Sn_5$ intermetallic compounds are responsible for the electromigration failure in the joint. Yet, the failure mode changes to void formation in the interface of $Ni_3Sn_4$ and the solder for the joint with the Cu/Ni UBM. The measured activation energy is 0.85 eV and 1.06 eV for the joint with the Cu/Ni and the Cu UBM, respectively.

키워드

과제정보

연구 과제 주관 기관 : National Science Council of R.O.C.

참고문헌

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  2. Optimal Ni(P) thickness design in ultrathin-ENEPIG metallization for soldering application concerning electrical impedance and mechanical bonding strength vol.611, 2014, https://doi.org/10.1016/j.msea.2014.05.049
  3. CPI Parametric Investigation of UBM-Al Interface for Cu Pillar Flip-Chip Application vol.6, pp.7, 2016, https://doi.org/10.1109/TCPMT.2016.2571059
  4. Experimental and simulation analysis of concave-down resistance curve during electromigration in solder joints vol.115, pp.8, 2014, https://doi.org/10.1063/1.4867048
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  7. Formation of Sn-rich phases via the decomposition of Cu6Sn5 compounds during current stressing vol.124, 2014, https://doi.org/10.1016/j.matlet.2014.03.071
  8. Effects of high current density on lead-free solder joints of chip-size passive SMD components vol.30, pp.2, 2018, https://doi.org/10.1108/SSMT-10-2017-0032
  9. Advances on high current load effects on lead-free solder joints of SMD chip-size components and BGAs pp.0305-6120, 2019, https://doi.org/10.1108/CW-11-2018-0088
  10. Ni Barrier Symmetry Effect on Electromigration Failure Mechanism of Cu/Sn–Ag Microbump vol.15, pp.2, 2019, https://doi.org/10.1007/s13391-018-00108-5
  11. NCF Trap이 Cu/Ni/Sn-Ag 미세범프의 Electromigration 특성에 미치는 영향 분석 vol.25, pp.4, 2012, https://doi.org/10.6117/kmeps.2018.25.4.083
  12. Enhancement of electromigration lifetime of copper lines by eliminating nanoscale grains in highly <111>-oriented nanotwinned structures vol.15, pp.None, 2021, https://doi.org/10.1016/j.jmrt.2021.11.111