References
- C.-W. Lee, A. Borne, I. Ferain, A. Afzalian, R. Yan, N. D. Akhavan, P. Razavi, and J.-P. Colinge, "High-temperature performance of silicon junctionless MOSFETs," IEEE Trans. Electron Devices, Vol.57, No.3, pp. 620-625, Mar., 2010. https://doi.org/10.1109/TED.2009.2039093
- C.-W. Lee, A. Afzalian, N. D. Akhavan, R. Yan, I. Ferain, and J.-P. Colinge, "Junctionless multigate field-effect transistor," Appl. Phys. Lett., Vol.94, No.5, p. 053511, Feb., 2009. https://doi.org/10.1063/1.3079411
- C.-W. Lee, A. Afzalian, N. D. Akhavan, R. Yan, P. Razavi, R. Yu, R. T. Doria, and J.-P. Colinge, "Low subthreshold slope in junctionless multigate transistors," Appl. Phys. Lett., Vol.96, No.10, pp. 102106-1-102106-3, Mar., 2010.
- J.-P. Colinge, C.-W. Lee, I. Ferain, N. D. Akhavan, R. Yan, P. Razavi, R. Yu, A. N. Nazalov, and R. T. Doria, "Reduced electric field in junctionless transistors," Appl. Phys. Lett., Vol.96, No.7, pp.073510-1-073510-3, Feb., 2010. https://doi.org/10.1063/1.3299014
- S. Cho, K. R. Kim, B.-G. Park, and I. M. Kang, "RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs," IEEE Trans. Electron Devices, Vol.58, No.5, pp.1388-1396, May, 2011. https://doi.org/10.1109/TED.2011.2109724
- E. Torres-Rios, R. Torres-Torres, G. Valdovinos- Fierro, and E. A. Gutierrez-D., "A method to determine the gate bias-dependent and gate biasindependent components of MOSFET series resistance from S-parameter," IEEE Trans. Electron Devices, Vol.53, No.3, pp.571-573, Mar., 2006. https://doi.org/10.1109/TED.2006.870328
- M. Kang, I. M. Kang, Y. H. Jung, and H. Shin, "Separate extraction of gate resistance components in RF MOSFETs," IEEE Trans. Electron Devices, Vol.54, No.6, pp.1459-1463, Jun., 2007. https://doi.org/10.1109/TED.2007.896361
- J.-Y. Kim, M.-K. Choi, and S. Lee, "Accuracy Analysis of Extraction Methods for Effective Channel Length in Deep-Submicron MOSFETs," J. Semicond. Technol. Sci., Vol.11, No.2, pp.130-133, Jun., 2011. https://doi.org/10.5573/JSTS.2011.11.2.130
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