DOI QR코드

DOI QR Code

Dry Etching Properties of TiO2 Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application

  • Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • Received : 2012.01.03
  • Accepted : 2012.03.28
  • Published : 2012.06.25

Abstract

In this work, we investigated to the etching characteristics of $TiO_2$ thin film and the selectivity using the inductively coupled plasma system. The etch rate and the selectivity were obtained with various gas mixing ratios. The maximum etch rate of $TiO_2$ thin film was 61.6 nm/min. The selectivity of $TiO_2$ to TiN, and $TiO_2$ to $SiO_2$ were obtained as 2.13 and 1.39, respectively. The etching process conditions are 400 W for RF power, -150 V for DC-bias voltage, 2 Pa for the process pressure, and $40^{\circ}C$ for substrate temperature. The chemical states of the etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS). Its analysis showed that the etching mechanism was based on the physical and chemical pathways in the ion-assisted physical reaction.

Keywords

References

  1. D. S. Golubovic, A. H. Miranda, N. Akil, R. T. F. van Schaijk, M. J. van Duuren, Microelectron. Eng. 84 2921 (2007) [DOI:10.1016/j.mee.2007.009].
  2. R. Dong, D. S. Lee, M. B. Pyun, M. Hasan, H. J. Choi, M. S. Jo, D. J. Seong, M. Chang, S. H. Heo, J. M. Lee, H. K. Park, H. S. Hwang, Appl. Phys. A 93 409 (2008) [DOI:10.1007/s00339-008-4782-x].
  3. D. S. Jeong, H. Schroeder, R. Waser, Appl. Phys. Lett. 89 082909 (2006) [DOI:10.1063/1.2336621].
  4. B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, J. Appl. Phys. 98 033715 (2005) [DOI:10.1063/1.2001146].
  5. J. F. Gibbons, W. E. Beadle, Solid State Electron. 7 785 (1964) [DOI:10.1016/0038-1101(64)90131-5].
  6. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S. Choi, B. H. Park, Appl. Phys. Lett. 85 5655 (2004) [DOI:10.1063/1.1831560].
  7. C. Kugeler, M. Meier, R. Rosezin, S. Gilles, R. Waser, Solid-State Electron. 53 1287 (2009) [DOI:10.1016/j.sse.2009.03.034].
  8. C. Nauenheim, C. Kugeler, A. Rudiger, R. Waser, A. Flocke, T.G. Noll, IEEE 464 (2008) [DOI:10.1109/NANO.2008.141].
  9. S. Norasetthekul, P. Y. Park, K. H. Baik, K. P. Lee, J. H. Shin, B. S. Jeong, V. Shishodia, E. S. Lambers, D. P. Norton, S. J. Pearton, Appl. Sur. Sci. 185 27 (2001) [DOI:10.1016/S0169-4332(01)00562-1].
  10. J. B Park, W. S. Lim, S. D. Park, B. J. Park, G. Y. Yeom, J. Kor. Phys. Soc. 54 976 (2009) [DOI:10.3938/jkps.54.976].
  11. S. J. Pearton, D. P. Norton, Plasma Process. Polym. 2 16 (2005) [DOI:10.1002/ppap.200400035].
  12. N. M. Muthukrishnan, K. Amberialdis, A. E. Riad, J. Electrochem. Soc. 144 1780 (1997) [DOI:10.1149/1.1837679].
  13. B. S Kang, Y. T. Sul, S. J. Oh, H. J. Lee, T. Alberktsson, Acta Biomater. 5 2222 (2009) [DOI:10.1016/j.actbio.2009.01.049].
  14. A. Leon, D. Schild, M. Fichtner, J. Alloys Compd. 404-406 766 (2005) [DOI:10.1016/j.jallcom.2004.11.129].
  15. D. S. Um, D. P. Kim, G. H. Kim, J. C. Woo, C. I. Kim, J. Kor. Phys. Soc. 54 1054 (2009) [DOI:10.3938/jkps.54.1054].

Cited by

  1. Surface Etching of TiO2Thin Films Using High Density Cl2/Ar Plasma vol.16, pp.6, 2015, https://doi.org/10.4313/TEEM.2015.16.6.346
  2. Inductive couple plasma reactive ion etching characteristics of TiO2 thin films vol.587, 2015, https://doi.org/10.1016/j.tsf.2014.11.055
  3. Etching Characteristics and Mechanisms of TiO2 Thin Films in CF4 + Ar, Cl2 + Ar and HBr + Ar Inductively Coupled Plasmas vol.36, pp.6, 2016, https://doi.org/10.1007/s11090-016-9737-y
  4. Dry etching characteristics of TiO2 thin films using inductively coupled plasma for gas sensing vol.107, 2014, https://doi.org/10.1016/j.vacuum.2014.03.025
  5. Effect of Dry Etching of TiO2Thin Films Using Inductively Coupled Plasma vol.456, pp.1, 2013, https://doi.org/10.1080/00150193.2013.846201