한국기계가공학회지 (Journal of the Korean Society of Manufacturing Process Engineers)

  • 제11권1호
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  • Pages.1-6
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  • 2012
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  • 1598-6721(pISSN)
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  • 2288-0771(eISSN)
한국기계가공학회 (The Korean Society of Manufacturing Process Engineers)
권호 표지

웨이퍼 폴리싱 공정의 회전속도와 진폭속도에 따른 가공특성 연구

A Study on the Characteristics of a Wafer-Polishing Process at Various Machining and Oscillation Speed

  • 이은상 (인하대학교 대학원 기계공학과) ;
  • 이상균 (인하대학교 대학원 기계공학과) ;
  • 김성현 (인하대학교 대학원 기계공학과) ;
  • 원종구 (인하대학교 기계공학과)
  • 발행 : 2012.02.29
⟨ 이전 논문 다음 논문 ⟩

초록

The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.

키워드

참고문헌

  1. Z.J. Pei, "A study on surface grinding of 300mm silicon wafers", International Journal of Machine Tools & Manufacture 42(2002) 385-393l. https://doi.org/10.1016/S0890-6955(01)00122-5
  2. Jung-Taik Lee, Jong-Koo Won and Eun-Sang Lee, "A Study on the Characteristics of a Wafer-Polishing Process according to Machining Conditions", International Journal of Precision Engineering and Manufacturing Vol. 10, No. 1, pp. 23-28, 2009. https://doi.org/10.1007/s12541-009-0004-5
  3. Tae-Hee, Shin, Jong-Koo, Won, Jung-Taik, Lee, Eun-Sang, Lee, "A Study on the Characteristics of Surface on the Wafer Polishing according to Machining Velocity and Processing Temperature of Slurry", Transactions of the Korean Society of Machine Tool Engineers, Vol. 17, No. 4, pp. 30-35, 2008. 8.
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