한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권6호
  • /
  • Pages.409-413
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  • 2012
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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4비트 SONOS 전하트랩 플래시메모리를 구현하기 위한 기판 바이어스를 이용한 2단계 펄스 프로그래밍에 관한 연구

A Study on a Substrate-bias Assisted 2-step Pulse Programming for Realizing 4-bit SONOS Charge Trapping Flash Memory

  • 김병철 (경남과학기술대학교 전자공학과) ;
  • 강창수 (유한대학교 전자정보과) ;
  • 이현용 (전남대학교 응용화학공학부) ;
  • 김주연 (울산과학대학교 전기전자학부)
  • Kim, Byung-Cheul (Department of Electronic Engineering, Gyeongnam National University of Science and Technology(GnTECH)) ;
  • Kang, Chang-Soo (Department of Electronic Engineering, Yuhan College) ;
  • Lee, Hyun-Yong (School of Applied Chemical Engineering, Chonnam National University) ;
  • Kim, Joo-Yeon (School of Electricity & Electronics, Ulsan College)
  • 투고 : 2012.03.30
  • 심사 : 2012.05.15
  • 발행 : 2012.06.01
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초록

In this study, a substrate-bias assisted 2-step pulse programming method is proposed for realizing 4-bit/1-cell operation of the SONOS memory. The programming voltage and time are considerably reduced by this programming method than a gate-bias assisted 2-step pulse programming method and CHEI method. It is confirmed that the difference of 4-states in the threshold voltage is maintained to more than 0.5 V at least for 10-year for the multi-level characteristics.

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참고문헌

  1. ITRS, International Technology Roadmap for Semiconductors, http://public.itrs.net (2011).
  2. B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, IEEE Electron Device Lett., 21, 543 (2000). https://doi.org/10.1109/55.877205
  3. E. Lusky, Y. Shacham-Diamand, I. Bloom, and B. Eitan, IEEE Electron Device Lett., 22, 556 (2001). https://doi.org/10.1109/55.962662
  4. T. H. Hsu, M. H. Lee, J. Y. Wu, H. L. Lung, R. Liu, and C. Y. Lu, IEEE Electron Device Lett., 25, 795 (2004). https://doi.org/10.1109/LED.2004.838055
  5. G. Zhang, W. S. Hwang, S. H. Lee, B. J. Cho, and W. J. Yoo, IEEE Trans. Elec. Dev., 55, 2361 (2008). https://doi.org/10.1109/TED.2008.927396
  6. B. Eitan, G. Cohen, A.Shappir, E. Lusky, A. Givant, M. Janai, I. Bloom, Y. Polansky, O. Dadashev, A. Lavan, R. Sahar, and E. Maayan, Electron Devices Meeting IEDM Technical Digest (IEEE International, 2005) p. 539.
  7. L. Breuil, L. Haspeslagh, P. Blomme, D. Wellekens, J. D. Vos, M. Lorenzini, and J. V. Houdt, IEEE Trans. Elec. Dev., 52, 2250 (2005). https://doi.org/10.1109/TED.2005.856803
  8. Y. Li, R. Huang, Y. Cai, F. Zhou, X. Shan, X. Zhang, and Y. Wang, IEEE Electron Device Lett., 28, 622 (2007). https://doi.org/10.1109/LED.2007.897888
  9. M. K. Cho and D. M. Kim, IEEE Electron Device Lett., 24, 260 (2003). https://doi.org/10.1109/LED.2003.810887
  10. T. Hsu, J. Wu1, Y. C. King, H. T. Lue, Y. H. Shih, E. Lai, K. Hsieh, R. Liu, and C. Lu, Solid-State Electron., 51, 1523 (2007). https://doi.org/10.1016/j.sse.2007.09.032
  11. S. S. Chung, Y. H. Tseng, C. S. Lai, Y. Hsu, E. Ho, T. Chen, L. C. Peng, and C. H. Chu, Electron Devices Meeting IEDM Technical Digest (IEEE International, 2007) p. 457.
  12. H. C. Chien, C. H. Kao, J. W. Chang, and T. K. Tsai, Microelectron. Eng., 80, 256 (2005). https://doi.org/10.1016/j.mee.2005.04.077
  13. G. Zhang and W. J. Yoo, Solid-State Electron., 54, 14 (2010). https://doi.org/10.1016/j.sse.2009.09.009