Advances in materials Research

  • 제1권2호
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  • Pages.109-113
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  • 2012
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  • 2234-0912(pISSN)
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  • 2234-179X(eISSN)
테크노프레스 (Techno-Press)
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DOI QR코드

DOI QR Code

Electromigration-induced void evolution in upper and lower layer dual-inlaid Copper interconnect structures

  • Pete, D.J. (Datta Meghe College of Engineering) ;
  • Mhaisalkar, S.G. (School of Materials Engineering, Nanyang Technological University) ;
  • Helonde, J.B. (ITM College of Engineering) ;
  • Vairagar, A.V. (OMScientific Private Limited)
  • 투고 : 2011.11.10
  • 심사 : 2012.05.26
  • 발행 : 2012.06.25
⟨ 이전 논문 다음 논문 ⟩

초록

Electromigration-induced void evolutions in typical upper and lower layer dual-inlaid Copper (Cu) interconnect structures were simulated by applying a phenomenological model resorting to Monte Carlo based simulations, which considers redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Copper/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolutions observations in many studies reported by several researchers heretofore. These findings warrant need to re-investigate technologically important electromigration mechanisms by developing rigorous models based on similar concepts.

키워드

참고문헌

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