Journal of Ceramic Processing Research

한양대학교 세라믹연구소 (Ceramic Processing Research Center)
권호 표지

Effect of dopants(Tri-valent, Penta-valent) on the electrical and optical properties of SnO2 based transparent electrodes

  • Kim, G.W. (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Sung, C.H. (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Seo, Y.J. (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Park, K.Y. (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Heo, S.N. (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Lee, S.H. (Department of Material Processing, Advanced Thin Film Research Group, Korea Institute of Materials Science (KIMS)) ;
  • Koo, B.H. (School of Nano & Advanced Materials Engineering, Changwon National University)
  • 발행 : 2012.11.01
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초록

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

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