Journal of Ceramic Processing Research

한양대학교 세라믹연구소 (Ceramic Processing Research Center)
권호 표지

The effect of various parameters for few-layered graphene synthesis using methane and acetylene

  • Kim, Jungrok (Department of Mechanical Engineering, Pusan National University) ;
  • Seo, Jihoon (National Core Research Center for Hybrid Materials Solution, Pusan National University) ;
  • Jung, Hyun Kyung (Department of Diagnostic Radiology, College of Medicine Inje University, Haeundae Paik Hospital) ;
  • Kim, Soo H. (Department of Nanomechatronics Engineering, Pusan National University) ;
  • Lee, Hyung Woo (National Core Research Center for Hybrid Materials Solution, Pusan National University)
  • 발행 : 2012.07.01
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초록

The effect of the parameters for few-layered graphene growth by thermal CVD on nickel substrate was investigated. Graphene can be synthesized by using different strategies. Chemical vapor deposition (CVD) has known as one of the most attractive methods to produce graphene due to its good film uniformity, compatibility and large scale production. The control of parameters such as temperature, growth time and pressure in CVD process has been widely recognized as the most important process in graphene growth. Different carbon precursors, methane and acetylene, were introduced in the quartz tube with a variety of growth conditions. Raman spectroscopy was used to confirm the presence of a few- or multi-layered graphene.

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