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Protection Circuit Module에 최적화된 60 V급 TDMOSFET 최적화 설계에 관한 연구

Study on Design of 60 V TDMOSFET for Protection Circuit Module

  • 이현웅 (고려대학교 전기공학과) ;
  • 정은식 (고려대학교 전기공학과) ;
  • 오름 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • Lee, Hyun-Woong (School of Electrical Engineering, Korea University) ;
  • Jung, Eun-Sik (School of Electrical Engineering, Korea University) ;
  • Oh, Reum (School of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (School of Electrical Engineering, Korea University)
  • 투고 : 2012.03.16
  • 심사 : 2012.03.26
  • 발행 : 2012.05.01

초록

Protected Circuit Module protects battery from over-charge and over-discharge, also prevents accidental explosion. Therefore, power MOSFET is essential to operate as a switch within the module. To reduce power loss of MOSFET, the on state voltage drop should be lowered and the switching time should be shorted. However there is trade-off between the breakdown voltage and the on state voltage drop. The TDMOS can reduce the on state voltage drop. In this paper, effect of design parameter variation on electrical properties of TDMOS, were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get 65% higher breakdown voltage and 17.4% on resistance enhancement.

키워드

참고문헌

  1. E. G. Kang, B. S. Ahn, and T. J Nam, J. KIEEME, 23, 273 (2010).
  2. B. J. Baliga, Fundamentals of Power Semiconductor Devices, (Springer, 2008) p. 283.
  3. J. S. Lee, S. S. Kyoung, E. G. Kang, and M. Y. Sung J. KIEEME, 21, 889 (2008).
  4. J. I. Lee, S. S. Kyoung, J. C. Choi, and M. Y. Sung, J. KIEEME, 21, 74 (2008).
  5. J. H. Oh, S. M Yang, E. S. Jung, and M. Y. Sung, J. KIEEME, 23, 671 (2010).

피인용 문헌

  1. Unbalanced Layout Method for the 4H-SiC JBS Diode Offering Improved Tradeoff between Leakage Current and ON-Resistance vol.37, pp.8, 2016, https://doi.org/10.1109/LED.2016.2584659